High Voltage SiC Schottky Diodes in Rectifiers for X-ray Generators

被引：2
|
作者：
Luerkens, P. [1 ]
Guimaraes, P. [1 ]
Godignon, P. [2 ]
Millan, J. [2 ]
机构：
[1] Philips Innovat Technol Res, Weisshausstr 2, D-5066 Aachen, Germany
[2] CNM, CSIC, Cerdanyola Del Valles 08193, Spain
来源：
SILICON CARBIDE AND RELATED MATERIALS 2011, PTS 1 AND 2 | 2012年 / 717-720卷
关键词：
Silicon-Carbide; Schottky-diode; Voltage Multiplier; Cascade Rectifier; Behavioral Model; X-ray generator;
D O I：
10.4028/www.scientific.net/MSF.717-720.1245
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Silicon-Carbide-based semiconductors offer realization of efficient high voltage components, with high switching speed and low conduction losses [1]. SiC Schottky diodes with safe blocking capability of at least 4 kV were produced and characterized. A simulation model for loss determination was developed. Real losses were determined on a small scale test setup and chip temperature distribution was obtained from that, combined with FEM calculation. A full-size rectifier 100 kW/140 kV-SiC-rectifier module with six times higher power density than with conventional Si-technology was realized.
引用
收藏
页码：1245 / +
页数：2
相关论文
共 50 条
  • [1] The comparison of high voltage X-ray generators
    Taylor, LS
    Tucker, KL
    BUREAU OF STANDARDS JOURNAL OF RESEARCH, 1932, 9 (03): : 333 - 352
  • [2] Semi-transparent SiC Schottky diodes for X-ray spectroscopy
    Lees, J. E.
    Bassford, D. J.
    Fraser, G. W.
    Horsfall, A. B.
    Vassilevski, K. V.
    Wright, N. G.
    Owens, A.
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 2007, 578 (01): : 226 - 234
  • [3] High voltage Ni/4H-SiC Schottky rectifiers
    Chilukuri, Ravi K.
    Baliga, B.Jayant
    IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD), 1999, : 161 - 164
  • [4] High dose gamma-ray irradiation of SiC Schottky rectifiers
    Kim, J
    Nigam, S
    Ren, F
    Schoenfeld, D
    Chung, GY
    Pearton, SJ
    ELECTROCHEMICAL AND SOLID STATE LETTERS, 2003, 6 (08) : G105 - G107
  • [5] Mo/4H-SiC Schottky diodes for room temperature X-ray and γ-ray spectroscopy
    Lioliou, G.
    Renz, A. B.
    Shah, V. A.
    Gammon, P. M.
    Barnett, A. M.
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 2022, 1027
  • [6] SiC merged p-n Schottky rectifiers for high voltage applications
    Held, R
    Kaminski, N
    Niemann, E
    SILICON CARBIDE, III-NITRIDES AND RELATED MATERIALS, PTS 1 AND 2, 1998, 264-2 : 1057 - 1060
  • [7] Design of high voltage 4H-SiC superjunction Schottky rectifiers
    Zhu, L
    Losee, P
    Chow, TP
    HIGH PERFORMANCE DEVICES, PROCEEDINGS, 2005, : 241 - 247
  • [8] High voltage GaN Schottky rectifiers
    Dang, GT
    Zhang, AP
    Ren, F
    Cao, XA
    Pearton, SJ
    Cho, H
    Han, J
    Chyi, JI
    Lee, CM
    Chuo, CC
    Chu, SNG
    Wilson, RG
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2000, 47 (04) : 692 - 696
  • [9] Advanced high-voltage 4H-SiC Schottky rectifiers
    Zhu, Lin
    Chow, T. Paul
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2008, 55 (08) : 1871 - 1874
  • [10] X-ray detectors based on GaN Schottky diodes
    Duboz, Jean-Yves
    Frayssinet, Eric
    Chenot, Sebastien
    Reverchon, Jean-Luc
    Idir, Mourad
    APPLIED PHYSICS LETTERS, 2010, 97 (16)
12345