High Voltage SiC Schottky Diodes in Rectifiers for X-ray Generators

被引：2

作者：

Luerkens, P. ^{[1
]}

Guimaraes, P. ^{[1
]}

Godignon, P. ^{[2
]}

Millan, J. ^{[2
]}

机构：

[1] Philips Innovat Technol Res, Weisshausstr 2, D-5066 Aachen, Germany

[2] CNM, CSIC, Cerdanyola Del Valles 08193, Spain

来源：

SILICON CARBIDE AND RELATED MATERIALS 2011, PTS 1 AND 2 | 2012年 / 717-720卷

关键词：

Silicon-Carbide; Schottky-diode; Voltage Multiplier; Cascade Rectifier; Behavioral Model; X-ray generator;

D O I：

10.4028/www.scientific.net/MSF.717-720.1245

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Silicon-Carbide-based semiconductors offer realization of efficient high voltage components, with high switching speed and low conduction losses [1]. SiC Schottky diodes with safe blocking capability of at least 4 kV were produced and characterized. A simulation model for loss determination was developed. Real losses were determined on a small scale test setup and chip temperature distribution was obtained from that, combined with FEM calculation. A full-size rectifier 100 kW/140 kV-SiC-rectifier module with six times higher power density than with conventional Si-technology was realized.

引用

页码：1245 / +

页数：2

共 50 条

[21] High voltage (450 V) GaN schottky rectifiers
Bandic, ZZ
Bridger, PM
Piquette, EC
McGill, TC
Vaudo, RP
Phanse, VM
Redwing, JM
APPLIED PHYSICS LETTERS, 1999, 74 (09) : 1266 - 1268
[22] MEASURE FOR OUTPUT OF X-RAY GENERATORS WITH ANY SHAPE OF VOLTAGE
WACH, P
LEITGEB, N
SCHUY, S
BIOMEDIZINISCHE TECHNIK, 1977, 22 (06): : 132 - 138
[23] X-ray generators
Seibert, JA
RADIOLOGY, 1996, 201 : 16 - 16
[24] Isothermal current–voltage characteristics of high-voltage 4H-SiC junction barrier Schottky rectifiers
M. E. Levinshtein
P. A. Ivanov
Q. J. Zhang
J. W. Palmour
Semiconductors, 2016, 50 : 656 - 661
[25] Low power-loss 4H-SiC Schottky rectifiers with high blocking voltage
Itoh, A
Kimoto, T
Matsunami, H
SILICON CARBIDE AND RELATED MATERIALS 1995, 1996, 142 : 689 - 692
[26] Synchronous rectifiers vs Schottky diodes in a buck topology for low voltage applications
Djekic, O
Brkovic, M
PESC'97: 28TH ANNUAL IEEE POWER ELECTRONICS SPECIALISTS CONFERENCE - RECORD, VOLS I AND II, 1997, : 1374 - 1380
[27] High voltage X-ray therapy
不详
NATURE, 1936, 138 : 1106 - 1107
[28] High voltage x-ray therapy
不详
BRITISH MEDICAL JOURNAL, 1936, 1936 : 1271 - 1273
[29] HIGH-VOLTAGE 4H-SIC SCHOTTKY-BARRIER DIODES
RAGHUNATHAN, R
ALOK, D
BALIGA, BJ
IEEE ELECTRON DEVICE LETTERS, 1995, 16 (06) : 226 - 227
[30] Effect of dopant concentration on high voltage 4H-SiC Schottky diodes
La Via, Francesco
Galvagno, Giuseppa
Firrincieli, Andrea
Di Franco, Salvatore
Severino, Andrea
Leone, Stefano
Mauceri, Marco
Pistone, Giuseppe
Abbondanza, Giuseppe
Portuese, Ferdinando
Calcagno, Lucia
Foti, Gaetano
SILICON CARBIDE 2006 - MATERIALS, PROCESSING AND DEVICES, 2006, 911 : 443 - +

← 1 2 3 4 5 →