Intrinsic Hot-Carrier Degradation of nMOSFETs by Decoupling PBTI Component in 28nm High-K/Metal Gate Stacks

被引：0

作者：

Hsu, Nathan Hui-Hsin ^{[1
]}

You, Jian-Wen ^{[1
]}

Ma, Huan-Chi ^{[1
]}

Lee, Shih-Ching ^{[1
]}

Chen, Eliot ^{[1
]}

Huang, L. S. ^{[1
]}

Cheng, Yao-Chin ^{[1
]}

Cheng, Osbert ^{[1
]}

Chen, I. C. ^{[1
]}

机构：

[1] United Microelect Corp Ltd UMC, Adv Technol Div Device, Tainan 74147, Taiwan

来源：

2012 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS) | 2012年

关键词：

component; high-k/metal gate device; PBTI and HC degradation; Intrinsic HC degradation;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

For the first time, a new decoupling method of PBTI component from hot-carrier (HC) stress is proposed. It is found that the HC degradation is contributed from both PBTI and intrinsic HC component. Using the power-law time exponent of V-t shift in PBTI and HC, the intrinsic HC degradation can be extracted. In addition, a physical model for HC degradation in high-k/metal gate (HK/MG) device has been suggested.

引用

页数：4

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