Intrinsic Hot-Carrier Degradation of nMOSFETs by Decoupling PBTI Component in 28nm High-K/Metal Gate Stacks

被引：0
|
作者：
Hsu, Nathan Hui-Hsin [1 ]
You, Jian-Wen [1 ]
Ma, Huan-Chi [1 ]
Lee, Shih-Ching [1 ]
Chen, Eliot [1 ]
Huang, L. S. [1 ]
Cheng, Yao-Chin [1 ]
Cheng, Osbert [1 ]
Chen, I. C. [1 ]
机构：
[1] United Microelect Corp Ltd UMC, Adv Technol Div Device, Tainan 74147, Taiwan
来源：
2012 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS) | 2012年
关键词：
component; high-k/metal gate device; PBTI and HC degradation; Intrinsic HC degradation;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
For the first time, a new decoupling method of PBTI component from hot-carrier (HC) stress is proposed. It is found that the HC degradation is contributed from both PBTI and intrinsic HC component. Using the power-law time exponent of V-t shift in PBTI and HC, the intrinsic HC degradation can be extracted. In addition, a physical model for HC degradation in high-k/metal gate (HK/MG) device has been suggested.
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页数：4
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