A {112}Σ3 grain boundary generated from the decomposition of a Σ9 grain boundary in multicrystalline silicon during directional solidification

被引：9

作者：

Chuang, Lu-Chung ^{[1
]}

Maeda, Kensaku ^{[1
]}

Shiga, Keiji ^{[1
]}

Morito, Haruhiko ^{[1
]}

Fujiwara, Kozo ^{[1
]}

机构：

[1] Tohoku Univ, IMR, Aoba Ku, Katahira 2-1-1, Sendai, Miyagi 9808577, Japan

来源：

SCRIPTA MATERIALIA | 2019年 / 167卷

基金：

日本学术振兴会;

关键词：

Grain boundary; Multicrystalline Si; Directional solidification; MULTI-CRYSTALLINE SILICON; IN-SITU OBSERVATION; EVOLUTION; INTERFACE; TWIN;

D O I：

10.1016/j.scriptamat.2019.03.037

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The generation of a {112}Sigma 3 grain boundary (GB) was observed in situ from the decomposition of a Sigma 9 GB during directional solidification of multicrystalline Si. A faceted groove formed at the junction of the solid/melt interface and the {112}Sigma 3 GB. This mechanism is different from that for the growth of (111)Sigma 3 GBs, for which no groove formed at the interface. If the growth rates for the adjacent facets of the groove are the same, the GB can grow in a straight manner along the (112) plane. The present results suggest that kinetics can give rise to high-energy GBs during solidification. (C) 2019 Acta Materialia Inc Published by Elsevier Ltd. All rights reserved.

引用

页码：46 / 50

页数：5

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