A {112}Σ3 grain boundary generated from the decomposition of a Σ9 grain boundary in multicrystalline silicon during directional solidification

被引：9
|
作者：
Chuang, Lu-Chung [1 ]
Maeda, Kensaku [1 ]
Shiga, Keiji [1 ]
Morito, Haruhiko [1 ]
Fujiwara, Kozo [1 ]
机构：
[1] Tohoku Univ, IMR, Aoba Ku, Katahira 2-1-1, Sendai, Miyagi 9808577, Japan
来源：
SCRIPTA MATERIALIA | 2019年 / 167卷
基金：
日本学术振兴会;
关键词：
Grain boundary; Multicrystalline Si; Directional solidification; MULTI-CRYSTALLINE SILICON; IN-SITU OBSERVATION; EVOLUTION; INTERFACE; TWIN;
D O I：
10.1016/j.scriptamat.2019.03.037
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
The generation of a {112}Sigma 3 grain boundary (GB) was observed in situ from the decomposition of a Sigma 9 GB during directional solidification of multicrystalline Si. A faceted groove formed at the junction of the solid/melt interface and the {112}Sigma 3 GB. This mechanism is different from that for the growth of (111)Sigma 3 GBs, for which no groove formed at the interface. If the growth rates for the adjacent facets of the groove are the same, the GB can grow in a straight manner along the (112) plane. The present results suggest that kinetics can give rise to high-energy GBs during solidification. (C) 2019 Acta Materialia Inc Published by Elsevier Ltd. All rights reserved.
引用
收藏
页码：46 / 50
页数：5
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