A {112}Σ3 grain boundary generated from the decomposition of a Σ9 grain boundary in multicrystalline silicon during directional solidification

被引：9
|
作者：
Chuang, Lu-Chung [1 ]
Maeda, Kensaku [1 ]
Shiga, Keiji [1 ]
Morito, Haruhiko [1 ]
Fujiwara, Kozo [1 ]
机构：
[1] Tohoku Univ, IMR, Aoba Ku, Katahira 2-1-1, Sendai, Miyagi 9808577, Japan
来源：
SCRIPTA MATERIALIA | 2019年 / 167卷
基金：
日本学术振兴会;
关键词：
Grain boundary; Multicrystalline Si; Directional solidification; MULTI-CRYSTALLINE SILICON; IN-SITU OBSERVATION; EVOLUTION; INTERFACE; TWIN;
D O I：
10.1016/j.scriptamat.2019.03.037
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
The generation of a {112}Sigma 3 grain boundary (GB) was observed in situ from the decomposition of a Sigma 9 GB during directional solidification of multicrystalline Si. A faceted groove formed at the junction of the solid/melt interface and the {112}Sigma 3 GB. This mechanism is different from that for the growth of (111)Sigma 3 GBs, for which no groove formed at the interface. If the growth rates for the adjacent facets of the groove are the same, the GB can grow in a straight manner along the (112) plane. The present results suggest that kinetics can give rise to high-energy GBs during solidification. (C) 2019 Acta Materialia Inc Published by Elsevier Ltd. All rights reserved.
引用
收藏
页码：46 / 50
页数：5
相关论文
共 50 条
  • [21] Modelling of grain boundary effects in nanocrystalline/multicrystalline silicon heterojunction solar cells
    Farrokh-Baroughi, Mahdi
    Sivoththaman, Siva
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2006, 21 (07) : 979 - 986
  • [22] Branching-induced grain boundary evolution during directional solidification of columnar dendritic grains
    Guo, Chunwen
    Li, Junjie
    Yu, Honglei
    Wang, Zhijun
    Lin, Xin
    Wang, Jincheng
    ACTA MATERIALIA, 2017, 136 : 148 - 163
  • [23] Influence of interfacial structure on propagating direction of small-angle grain boundaries during directional solidification of multicrystalline silicon
    Chuang, Lu-Chung
    Kiguchi, Takanori
    Kodama, Yumiko
    Maeda, Kensaku
    Shiga, Keiji
    Morito, Haruhiko
    Fujiwara, Kozo
    SCRIPTA MATERIALIA, 2019, 172 : 105 - 109
  • [24] Distribution of doped Mn at the Σ3 (112) grain boundary in Ge
    Wang, W.
    Zhang, S. L.
    Tian, Z. X.
    Xiao, W.
    JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 2010, 71 (03) : 370 - 374
  • [25] Effect of secondary arm orientation on unusual overgrowth at converging grain boundary during directional solidification in 3D
    Guo, Chunwen
    Li, Junjie
    Wang, Zhijun
    Wang, Jincheng
    COMPUTATIONAL MATERIALS SCIENCE, 2020, 176
  • [26] PHOTOTHERMAL CHARACTERRIZATION BY ATOMIC FORCE MICROSCOPY AROUND GRAIN BOUNDARY IN MULTICRYSTALLINE SILICON MATERIAL
    Hara, Kenji
    Takahashi, Takuji
    35TH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE, 2010, : 1387 - 1389
  • [27] Dependence of phosphorus gettering and hydrogen passivation efficacy on grain boundary type in multicrystalline silicon
    Karzel, P.
    Ackermann, M.
    Groener, L.
    Reimann, C.
    Zschorsch, M.
    Meyer, S.
    Kiessling, F.
    Riepe, S.
    Hahn, G.
    JOURNAL OF APPLIED PHYSICS, 2013, 114 (24)
  • [28] In situ HREM studies of grain boundary formation during solidification of B-doped silicon
    Fukushima, H
    Kuchiwaki, I
    Hirabayashi, T
    PRICM 5: THE FIFTH PACIFIC RIM INTERNATIONAL CONFERENCE ON ADVANCED MATERIALS AND PROCESSING, PTS 1-5, 2005, 475-479 : 3875 - 3878
  • [29] In situ observation of grain-boundary development from a facet-facet groove during solidification of silicon
    Hu, Kuan-Kan
    Maeda, Kensaku
    Morito, Haruhiko
    Shiga, Keiji
    Fujiwara, Kozo
    ACTA MATERIALIA, 2018, 153 : 186 - 192
  • [30] Dependence of phosphorus gettering and hydrogen passivation efficacy on grain boundary type in multicrystalline silicon
    Department of Physics, University of Konstanz, 78464 Konstanz, Germany
    不详
    不详
    不详
    不详
    不详
    1600, American Institute of Physics Inc. (114):
12345