Electrical Properties of Grain Oriented Bi4Ti3O12-based Ceramics for High Temperature Sensors

被引：0
|
作者：
Shiga, Koji [1 ]
Yasuda, Syogo [1 ]
Hiruma, Yuji [1 ]
Nagata, Hajime [1 ]
Takenaka, Tadashi [1 ]
机构：
[1] Tokyo Univ Sci, Fac Sci & Technol, Noda, Chiba 2788510, Japan
来源：
ELECTROCERAMICS IN JAPAN XV | 2013年 / 566卷
关键词：
lead-free piezoelectric ceramics; bismuth layer-structured ferroelectrics; sensor; resistivity; grain orientation; Bi4Ti3O12; ceramics; OXIDES;
D O I：
10.4028/www.scientific.net/KEM.566.237
中图分类号：
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
Grain-oriented Bi4Ti2.92Nb0.08O12 (BITN) ceramics were prepared by hot-forging (HF) method. The grain orientation factor, F, of BITN ceramic determined by the Lotgering method were approximately 0.96. The resistivity, rho, along the c-axis of HF-BITN ceramic is higher than that of the a,b-axis of HF-BITN and OF-BITN ceramics for the temperature range from 100 to 400 degrees C. The rho along the direction parallel to the c-axis is found to be about 10(9) Omega.cm at 400 degrees C, which is about ten times larger than that of OF-BITN ceramics. From resonance and anti-resonance characteristics, electromechanical coupling factor, k(24), was 0.026 at room temperature.
引用
收藏
页码：237 / 240
页数：4
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