Electrical Properties of Grain Oriented Bi4Ti3O12-based Ceramics for High Temperature Sensors

被引：0

作者：

Shiga, Koji ^{[1
]}

Yasuda, Syogo ^{[1
]}

Hiruma, Yuji ^{[1
]}

Nagata, Hajime ^{[1
]}

Takenaka, Tadashi ^{[1
]}

机构：

[1] Tokyo Univ Sci, Fac Sci & Technol, Noda, Chiba 2788510, Japan

来源：

ELECTROCERAMICS IN JAPAN XV | 2013年 / 566卷

关键词：

lead-free piezoelectric ceramics; bismuth layer-structured ferroelectrics; sensor; resistivity; grain orientation; Bi4Ti3O12; ceramics; OXIDES;

D O I：

10.4028/www.scientific.net/KEM.566.237

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Grain-oriented Bi4Ti2.92Nb0.08O12 (BITN) ceramics were prepared by hot-forging (HF) method. The grain orientation factor, F, of BITN ceramic determined by the Lotgering method were approximately 0.96. The resistivity, rho, along the c-axis of HF-BITN ceramic is higher than that of the a,b-axis of HF-BITN and OF-BITN ceramics for the temperature range from 100 to 400 degrees C. The rho along the direction parallel to the c-axis is found to be about 10(9) Omega.cm at 400 degrees C, which is about ten times larger than that of OF-BITN ceramics. From resonance and anti-resonance characteristics, electromechanical coupling factor, k(24), was 0.026 at room temperature.

引用

页码：237 / 240

页数：4

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