A Subthreshold MOSFET Voltage Reference Based on Current Mirror Technology Under 55 nm CMOS Process

被引：6
|
作者：
Ning, Ning [1 ]
Zhao, Siyuan [1 ]
Wu, Kejun [1 ]
Wu, Shuangyi [1 ]
Liu, Taizhong [1 ]
Han, Junming [1 ]
Li, Liang [1 ]
机构：
[1] Univ Elect Sci & Technol China, State Key Lab Elect Thin Films & Integrated Devic, Chengdu 610054, Peoples R China
来源：
NANOSCIENCE AND NANOTECHNOLOGY LETTERS | 2014年 / 6卷 / 02期
关键词：
Subthreshold MOSFET; Current Mirror Technology; 55 nm CMOS Process; Second-Order Temperature Compensation; BANDGAP;
D O I：
10.1166/nnl.2014.1734
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
Based on current mirror technology, a subthreshold MOSFET voltage reference with second-order temperature compensation is designed. The reference generator utilizes gate-source voltage difference (Delta V-gs) between two NMOS transistors, which both operate in subthreshold region to achieve second-order temperature compensation. By using current mirror technology, Delta V-gs that is complementary to absolute temperature is added to the output of the voltage reference. Simulation results show that a temperature coefficient of 5.9 ppm/degrees C at 1.2 V is achieved from -55 degrees C to 160 degrees C. The reference generator operates under supply voltage ranging from 1.1 V to 1.5 V with current lower than 8.6 mu A.
引用
收藏
页码：128 / 133
页数：6
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