A 2.8-to-5.8 GHz harmonic VCO based on an 8-shaped inductor in a 28 nm UTBB FD-SOI CMOS process

被引:6
|
作者
Mahmoud, Ahmed [1 ]
Fanori, Luca [1 ,2 ]
Mattsson, Thomas [3 ]
Caputa, Peter [4 ]
Andreani, Pietro [1 ]
机构
[1] Lund Univ, Lund, Sweden
[2] Marvell Italy, Pavia, Italy
[3] Ericsson Modems, Lund, Sweden
[4] Ericsson AB, Lund, Sweden
关键词
8-Shaped; Magnetic coupling; VCO; Class-B; Reconfigurable core; Low phase noise; One octave; UTBB FD-SOI CMOS; WIDE-TUNING-RANGE;
D O I
10.1007/s10470-016-0759-4
中图分类号
TP3 [计算技术、计算机技术];
学科分类号
0812 ;
摘要
A 2.8-to-5.8 GHz harmonic VCO designed in a 28 nm UTBB FD-SOIC MOS process adopts a reconfigurable active core to save power at the lower oscillation frequencies, and to enable a trade-off between power consumption and phase noise at all frequencies. Interference caused by the magnetic coupling to and from the VCO inductor is greatly attenuated by resorting to an inductor in the shape of an 8. Simulations of the magnetic coupling between an 8-shaped inductor and a reference inductor show a reduction in magnetic coupling as high as 44 dB, depending also on size, orientation, and shape of the reference inductor. The UTBB FD-SOI CMOS process is instrumental to achieve a tuning range in excess of one octave at low power consumption. The VCO operates from 0.9 V and has a figure-of-merit of 186-189 dBc/Hz, depending on the oscillation frequency and the configuration of the oscillator core. The active area of the VCO is 380 x 700 mu m.
引用
收藏
页码:391 / 399
页数:9
相关论文
共 50 条
  • [21] Compact MOS Structure & Design for Ion-Ioff Thermal control in 28nm UTBB FD-SOI CMOS technology
    Lethiecq, R.
    Bawedin, M.
    Galy, Ph.
    17TH IEEE INTERNATIONAL CONFERENCE ON IC DESIGN AND TECHNOLOGY (ICICDT 2019), 2019,
  • [22] An Efficient Wide Tuning Range-0.4 dBm 65 GHz NMOS VCO on 22 nm FD-SOI CMOS
    Tibenszky, Zoltan
    Fritsche, David
    Carta, Corrado
    Ellinger, Frank
    2020 IEEE INTERNATIONAL SYMPOSIUM ON RADIO-FREQUENCY INTEGRATION TECHNOLOGY (RFIT), 2020, : 37 - 39
  • [23] Substrate noise mitigation using high resistivity base silicon wafer for a 14 GHz VCO on 28 nm FD-SOI
    Bendou, Youssef
    Rack, Martin
    Lederer, Dimitri
    Cathelin, Andreia
    Raskin, Jean-Pierre
    2023 21ST IEEE INTERREGIONAL NEWCAS CONFERENCE, NEWCAS, 2023,
  • [24] Bulk-Input VCO-based Sigma-Delta ADCs with Enhanced Linearity in 28-nm FD-SOI CMOS
    Ahmadi-Farsani, Javad
    de la Rosa, Jose M.
    2019 IEEE INTERNATIONAL SYMPOSIUM ON CIRCUITS AND SYSTEMS (ISCAS), 2019,
  • [25] A New 77 GHz Sampling Mixer in 28-nm FD-SOI CMOS Technology for Automotive Radar application
    Flete, Alexandre
    Viallon, Christophe
    Cathelin, Philippe
    Parra, Thierry
    2022 IEEE/MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM (IMS 2022), 2022, : 742 - 745
  • [26] A Reconfigurable 2.4GHz Power Amplifier for Polar Transmitters in 28nm FD-SOI CMOS technology
    Gkoutis, Panagiotis
    Kolios, Vasilis
    Kalivas, Grigorios
    2019 27TH TELECOMMUNICATIONS FORUM (TELFOR 2019), 2019, : 474 - 477
  • [27] A 28 GHz Phased-Array Transceiver for 5G Applications in 22 nm FD-SOI CMOS
    Cracan, Dan
    Elsayed, Nourhan
    Sanduleanu, Mihai
    MICROMACHINES, 2023, 14 (05)
  • [28] A Reflection-Coefficient Sensor for 28GHz Beamforming Transmitters in 22nm FD-SOI CMOS
    Zhang, Yang
    Mangraviti, Giovanni
    Nguyen, Johan
    Zong, Zhiwei
    Wambacq, Piet
    2021 IEEE INTERNATIONAL SOLID-STATE CIRCUITS CONFERENCE (ISSCC), 2021, 64 : 360 - +
  • [29] A 31 GHz body-biased configurable power amplifier in 28 nm FD-SOI CMOS for 5 G applications
    Torres, Florent
    Kerherve, Eric
    Cathelin, Andreia
    De Matos, Magali
    INTERNATIONAL JOURNAL OF MICROWAVE AND WIRELESS TECHNOLOGIES, 2021, 13 (01) : 3 - 20
  • [30] A 24-28GHz Reconfigurable CMOS Power Amplifier in 22nm FD-SOI for Intelligent SoC Applications
    Mayeda, Jill C.
    Lie, Donald Y. C.
    Lopez, Jerry
    2018 INTERNATIONAL SOC DESIGN CONFERENCE (ISOCC), 2018, : 111 - 112