A 2.8-to-5.8 GHz harmonic VCO based on an 8-shaped inductor in a 28 nm UTBB FD-SOI CMOS process

被引：6

作者：

Mahmoud, Ahmed ^{[1
]}

Fanori, Luca ^{[1
,2
]}

Mattsson, Thomas ^{[3
]}

Caputa, Peter ^{[4
]}

Andreani, Pietro ^{[1
]}

机构：

[1] Lund Univ, Lund, Sweden

[2] Marvell Italy, Pavia, Italy

[3] Ericsson Modems, Lund, Sweden

[4] Ericsson AB, Lund, Sweden

来源：

ANALOG INTEGRATED CIRCUITS AND SIGNAL PROCESSING | 2016年 / 88卷 / 03期

关键词：

8-Shaped; Magnetic coupling; VCO; Class-B; Reconfigurable core; Low phase noise; One octave; UTBB FD-SOI CMOS; WIDE-TUNING-RANGE;

D O I：

10.1007/s10470-016-0759-4

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

A 2.8-to-5.8 GHz harmonic VCO designed in a 28 nm UTBB FD-SOIC MOS process adopts a reconfigurable active core to save power at the lower oscillation frequencies, and to enable a trade-off between power consumption and phase noise at all frequencies. Interference caused by the magnetic coupling to and from the VCO inductor is greatly attenuated by resorting to an inductor in the shape of an 8. Simulations of the magnetic coupling between an 8-shaped inductor and a reference inductor show a reduction in magnetic coupling as high as 44 dB, depending also on size, orientation, and shape of the reference inductor. The UTBB FD-SOI CMOS process is instrumental to achieve a tuning range in excess of one octave at low power consumption. The VCO operates from 0.9 V and has a figure-of-merit of 186-189 dBc/Hz, depending on the oscillation frequency and the configuration of the oscillator core. The active area of the VCO is 380 x 700 mu m.

引用

页码：391 / 399

页数：9

共 50 条

[11] In-situ heater for thermal assist recovery of MOS devices in 28 nm UTBB FD-SOI CMOS technology
Galy, P.
Lethiecq, R.
Bawedin, M.
SOLID-STATE ELECTRONICS, 2020, 168
[12] Extended investigation of a novel MOS device for in-situ heating in 28 nm UTBB FD-SOI CMOS technology
Lethiecq, R.
Bawedin, M.
Galy, P.
2019 JOINT INTERNATIONAL EUROSOI WORKSHOP AND INTERNATIONAL CONFERENCE ON ULTIMATE INTEGRATION ON SILICON (EUROSOI-ULIS), 2019,
[13] One stage gain boosted power driver at 184 GHz in 28 nm FD-SOI CMOS
Sadlo, Sebastien
De Matos, Magali
Cathelin, Andreia
Deltimple, Nathalie
2021 IEEE RADIO FREQUENCY INTEGRATED CIRCUITS SYMPOSIUM (RFIC), 2021, : 119 - 122
[14] Minimum Supply Voltage of 2.45 GHz LC Oscillator in 28 nm FD-SOI Process
Siniscalchi, Mariana
Gammarano, Nicolas
Galup-Montoro, Carlos
Bourdel, Sylvain
Silveira, Fernando
2021 19TH IEEE INTERNATIONAL NEW CIRCUITS AND SYSTEMS CONFERENCE (NEWCAS), 2021,
[15] Design of CMOS Device Process Sensor in 28 nm FD-SOI with 2 % of Frequency Spread
Kalarikkal, Gowtham Peringattu
Goel, Rohit
Shrimali, Hitesh
2021 28TH IEEE INTERNATIONAL CONFERENCE ON ELECTRONICS, CIRCUITS, AND SYSTEMS (IEEE ICECS 2021), 2021,
[16] Optimized in situ heating control on a new MOS device structure in 28nm UTBB FD-SOI CMOS technology
Galy, Ph.
Lethiecq, R.
Bawedin, M.
2018 INTERNATIONAL CONFERENCE ON IC DESIGN AND TECHNOLOGY (ICICDT 2018), 2018, : 157 - 160
[17] Class AB Base-Band Amplifier Design with Body Biasing in 28nm UTBB FD-SOI CMOS
Videnovic-Misic, Mirjana
Cathelin, Philippe
Cathelin, Andreia
Nikolic, Borivoje
2017 IEEE SOI-3D-SUBTHRESHOLD MICROELECTRONICS TECHNOLOGY UNIFIED CONFERENCE (S3S), 2017,
[18] Ring VCO Phase Noise Optimization by Pseudo-Differential Architecture in 28nm FD-SOI CMOS
Gaidioz, David
De Matos, Magali
Cathelin, Andreia
Deval, Yann
2020 IEEE INTERNATIONAL SYMPOSIUM ON CIRCUITS AND SYSTEMS (ISCAS), 2020,
[19] A 77 GHz High Power and Gain Transformer-Coupled Amplifier in CMOS FD-SOI 28 nm
Hamani, A.
Vuong, T. P.
Yagoub, M. C. E.
2018 18TH MEDITERRANEAN MICROWAVE SYMPOSIUM (MMS), 2018, : 337 - 340
[20] An LO Frequency Tripler with Phase Shifter and Detector in 28nm FD-SOI CMOS for 28-GHz Transceivers
Gannedahl, Rikard
Sjoland, Henrik
2021 IEEE NORDIC CIRCUITS AND SYSTEMS CONFERENCE (NORCAS), 2021,

← 1 2 3 4 5 →