Ultralow Specific On-Resistance Superjunction Vertical DMOS With High-K Dielectric Pillar

被引：41

作者：

Luo, Xiaorong ^{[1
,2
]}

Jiang, Y. H. ^{[1
]}

Zhou, K. ^{[1
]}

Wang, P. ^{[1
]}

Wang, X. W. ^{[1
]}

Wang, Q. ^{[1
]}

Yao, G. L. ^{[1
]}

Zhang, B. ^{[1
]}

Li, Z. J. ^{[1
]}

机构：

[1] Univ Elect Sci & Technol China, State Key Lab Elect Thin Films & Integrated Devic, Chengdu 610054, Peoples R China

[2] China Elect Technol Grp Corp, Res Inst 24, Chongqing 400060, Peoples R China

来源：

IEEE ELECTRON DEVICE LETTERS | 2012年 / 33卷 / 07期

基金：

中国国家自然科学基金;

关键词：

Breakdown voltage (BV); high relative permittivity; specific on-resistance; superjunction (SJ); SRTIO3; THIN-FILMS;

D O I：

10.1109/LED.2012.2196969

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A superjunction (SJ) VDMOS with a high-k (HK) dielectric pillar below the trench gate is proposed and investigated by simulation. The HK dielectric causes a self-adapted assistant depletion of the n pillar. This not only increases the n-pillar doping concentration and thus reduces the specific on-resistance (R-on,R-sp) but also alleviates the charge-imbalance issue in SJ devices. The HK dielectric weakens the lateral field and enhances the vertical field strength in a high-voltage blocking state, leading to an improved breakdown voltage (BV). Ion implantation through trench sidewalls forms narrow and highly doped n pillars to further reduce the R-on,R-sp. The R-on,(sp) decreases by 42%, and BV increases by 15% compared with those of a conventional SJ VDMOS.

引用

页码：1042 / 1044

页数：3

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