Cd1-xZnxTe:: Growth and characterization of crystals for X-ray and gamma-ray detectors

被引：0

作者：

Li, GQ ^{[1
]}

Jie, WQ ^{[1
]}

Hua, H ^{[1
]}

Gu, Z ^{[1
]}

机构：

[1] Northwestern Polytech Univ, State Key Lab Solidif Proc, Xian 710072, Peoples R China

来源：

PROGRESS IN CRYSTAL GROWTH AND CHARACTERIZATION OF MATERIALS | 2003年 / 46卷 / 03期

关键词：

Cd1-xZnxTe; vertical Bridgman method; characterization; resistivity; IR transmission;

D O I：

10.1016/S0960-8974(03)90003-9

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

The choice a suitable crystal growth method and a reasonable x value is of profound importance in the preparation of high quality Cd1-xZnxTe crystals for x-ray and gamma-ray detectors. The present paper reviews the evolution and development of Cd1-xZnxTe crystal growth for x-ray and gamma-ray detectors. At the same time, emphasis is put upon finding the relationship between the x value and the quality of the Cd1-xZnxTe. Three sets of Cd1-xZnxTe ingots with different x values, specifically 0.10, 0.15, and 0.20 were grown by the vertical Bridgman method (VBM) and characterized. Their x specification was then correlated with their dislocation densities, Te precipitates, inclusions, IR transmission, resistivities, and impurity concentrations, respectively. It was found that VBM Cd0.85Zn0.15Te as grown in this paper possessed the best choice of qualities with respect to defects and impurities.

引用

页码：85 / 104

页数：20

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