Cd1-xZnxTe:: Growth and characterization of crystals for X-ray and gamma-ray detectors

被引：0
|
作者：
Li, GQ [1 ]
Jie, WQ [1 ]
Hua, H [1 ]
Gu, Z [1 ]
机构：
[1] Northwestern Polytech Univ, State Key Lab Solidif Proc, Xian 710072, Peoples R China
来源：
PROGRESS IN CRYSTAL GROWTH AND CHARACTERIZATION OF MATERIALS | 2003年 / 46卷 / 03期
关键词：
Cd1-xZnxTe; vertical Bridgman method; characterization; resistivity; IR transmission;
D O I：
10.1016/S0960-8974(03)90003-9
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
The choice a suitable crystal growth method and a reasonable x value is of profound importance in the preparation of high quality Cd1-xZnxTe crystals for x-ray and gamma-ray detectors. The present paper reviews the evolution and development of Cd1-xZnxTe crystal growth for x-ray and gamma-ray detectors. At the same time, emphasis is put upon finding the relationship between the x value and the quality of the Cd1-xZnxTe. Three sets of Cd1-xZnxTe ingots with different x values, specifically 0.10, 0.15, and 0.20 were grown by the vertical Bridgman method (VBM) and characterized. Their x specification was then correlated with their dislocation densities, Te precipitates, inclusions, IR transmission, resistivities, and impurity concentrations, respectively. It was found that VBM Cd0.85Zn0.15Te as grown in this paper possessed the best choice of qualities with respect to defects and impurities.
引用
收藏
页码：85 / 104
页数：20
相关论文
共 50 条
  • [31] Orthogonal strip gamma ray imaging system for use with HgI2 and Cd1-xZnxTe detectors
    Hilton, NR
    Lund, JC
    McKisson, J
    Brunett, BA
    VanScyoc, JM
    James, RB
    Barber, HB
    HARD X-RAY AND GAMMA-RAY DETECTOR PHYSICS, OPTICS, AND APPLICATIONS, 1997, 3115 : 199 - 204
  • [32] Dynamics of native oxide growth on CdTe and CdZnTe X-ray and gamma-ray detectors
    Zazvorka, Jakub
    Franc, Jan
    Beran, Lukas
    Moravec, Pavel
    Pekarek, Jakub
    Veis, Martin
    SCIENCE AND TECHNOLOGY OF ADVANCED MATERIALS, 2016, 17 (01) : 792 - 798
  • [33] Growth and characterization of Cd1-xZnxTe crystals with high Zn concentrations
    Bueno, JJP
    Rodríguez, ME
    Zelaya-Angel, O
    Baquero, R
    Gonzalez-Hernández, J
    Baños, L
    Fitzpatrick, BJ
    JOURNAL OF CRYSTAL GROWTH, 2000, 209 (04) : 701 - 708
  • [34] SURFACE PROBLEMS OF MERCURIC IODIDE-CRYSTALS USED AS X-RAY AND GAMMA-RAY DETECTORS
    MOHAMMEDBRAHIM, T
    HAMOULI, D
    IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1986, 33 (01) : 314 - 316
  • [35] Ellipsometry Characterisation for the Cd1-xZnxTe1-ySey Semiconductor Used in X-ray and Gamma Radiation Detectors
    Herraiz, Lidia Martinez
    Canga-arguelles, Jose Luis Plaza
    de Cal, Alejandro Francisco Brana
    CRYSTALS, 2023, 13 (04)
  • [36] Modified growth of Cd1-xZnxTe single crystals
    Zhu, SF
    Zhao, BJ
    Li, QF
    Yu, FL
    Shao, SY
    Zhu, XH
    JOURNAL OF CRYSTAL GROWTH, 2000, 208 (1-4) : 264 - 268
  • [37] Timing characteristics of a Cd1-xZnxTe detector-based X-ray imaging system
    Giakos, GC
    Vedantham, S
    Chowdhury, S
    Odogba, J
    Dasgupta, A
    Guntupalli, R
    Suryanarayanan, S
    Vega-Lozada, V
    Sridhar, M
    Khyati, M
    Shah, N
    IEEE TRANSACTIONS ON INSTRUMENTATION AND MEASUREMENT, 1999, 48 (05) : 909 - 914
  • [38] CdTe and CdZnTe X-ray and gamma-ray detectors for imaging systems
    Eisen, Y
    Shor, A
    Mardor, I
    IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2004, 51 (03) : 1191 - 1198
  • [39] Interconnect and bonding techniques for pixelated X-ray and gamma-ray detectors
    Schneider, A.
    Veale, M. C.
    Duarte, D. D.
    Bell, S. J.
    Wilson, M. D.
    Lipp, J. D.
    Seller, P.
    JOURNAL OF INSTRUMENTATION, 2015, 10
  • [40] Effects of Chemomechanical Polishing on CdZnTe X-ray and Gamma-Ray Detectors
    Egarievwe, Stephen U.
    Hossain, Anwar
    Okwechime, Ifechukwude O.
    Gul, Rubi
    James, Ralph B.
    JOURNAL OF ELECTRONIC MATERIALS, 2015, 44 (09) : 3194 - 3201
12345