Cd1-xZnxTe crystals for gamma detectors:: Evaluation of quality from photoconductivity measurements

被引：0
|
作者：
Gerasimenko, AS [1 ]
Komar, VK [1 ]
Migal, VP [1 ]
Nalivaiko, DP [1 ]
Oleinik, SV [1 ]
Sulima, SV [1 ]
Chugai, ON [1 ]
机构：
[1] Natl Acad Sci Ukraine, Inst Single Crystals Sci & Technol Concern, UA-61001 Kharkov, Ukraine
来源：
INORGANIC MATERIALS | 2005年 / 41卷 / 03期
关键词：
D O I：
10.1007/s10789-005-0113-1
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Data are presented on the spectral dependence of steady-state photoconductivity for Cd1-xZnxTe (x = 0.12-0.15) crystals grown under different conditions. The results indicate that the full width at half maximum of the near-edge photoconductivity peak is sensitive to the state of native structural defects and can be used to assess the quality of Cd1-xZnxTe crystals and their applicability in high-resolution gamma detectors.
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收藏
页码：229 / 231
页数：3
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