Electron Trap Transformation Under Positive-Bias Temperature Stressing

被引：13

作者：

Gao, Y. ^{[1
]}

Ang, D. S. ^{[1
]}

Bersuker, G. ^{[2
]}

Young, C. D. ^{[2
]}

机构：

[1] Nanyang Technol Univ, Sch Elect & Elect Engn, Singapore 639798, Singapore

[2] SEMATECH, Austin, TX 78741 USA

来源：

IEEE ELECTRON DEVICE LETTERS | 2013年 / 34卷 / 03期

关键词：

Bias temperature instability (BTI); electron traps; high-k/metal gate stack; oxide-trapped charge; GATE; RELAXATION; HFO2;

D O I：

10.1109/LED.2013.2242041

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Electron detrapping in the TiN/HfO2 gate n-MOSFET under dynamic positive-bias temperature instability (PBTI) is examined. Similar to hole detrapping under dynamic negative-bias temperature instability (NBTI), electron detrapping per relaxation cycle is a constant under a low oxide stress field (similar to 5.5 MV/cm), independent of the number of times the transistor is stressed and relaxed, and it progressively decreases with the number of stress/relaxation cycles at a higher oxide stress field (similar to 7 MV/cm). Analysis shows that the decrease is due to a portion of the electron trap states being transformed into deeper levels, thereby increasing the emission time of the trapped electrons. However, unlike hole detrapping, the decrease in electron detrapping is not accompanied by a correlated increase in the stress-induced leakage current, and it can be reversed with a moderate negative gate voltage. These differences from NBTI suggest that distinct defects are active under PBTI.

引用

页码：351 / 353

页数：3

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