A new radiation hardened flip-flop, named low power single-phase clocked rad-hard flip flop, is proposed. The structure is based on robust differential-input latches working on a single-phase clock, which allows a reduction in the number of nodes sensitive to radiation. The proposed structure optimizes area and power and offers better performance, as compared to state-of-the-art techniques. Experimental results from test chip manufactured in a 180-nm BCD technology exposed to heavy ions, neutrons and alpha particles show that the proposed structure significantly reduces single event upsets (SEU).