Interrogation Properties of Ternary Content Addressable Memory Using a CMOS-SRAM Cell

被引：0
|
作者：
Hayakawa, Sho [1 ]
Yoshida, Masahiro [1 ]
机构：
[1] Tokai Univ, Grad Sch Informat & Telecommun Engn, Tokyo, Japan
来源：
PROCEEDINGS OF THE 2016 SAI COMPUTING CONFERENCE (SAI) | 2016年
关键词：
Static Ternary CAM; Interrogation Properties; Packet Switching; CAM;
D O I：
暂无
中图分类号：
TP39 [计算机的应用];
学科分类号：
081203 ; 0835 ;
摘要：
This paper describes new ternary content addressable memory (TCAM) in which a CMOS-SRAM cell is used as a storage element. The TCAM can store three states of "1", "0" and "Don't Care". Don't Care acts as wildcards during interrogation operations. Also, the interrogation properties of the proposed TCAM are analyzed in detail. The theoretical results are good coincidence with HSPICE simulation.
引用
收藏
页码：1361 / 1364
页数：4
相关论文
共 50 条
  • [41] Energy-Aware Designs of Ferroelectric Ternary Content Addressable Memory
    Qian, Yu
    Fan, Zhenhao
    Wang, Haoran
    Li, Chao
    Imani, Mohsen
    Ni, Kai
    Zhang, Grace Li
    Li, Bing
    Schlichtmann, Ulf
    Zhuo, Cheng
    Yin, Xunzhao
    PROCEEDINGS OF THE 2021 DESIGN, AUTOMATION & TEST IN EUROPE CONFERENCE & EXHIBITION (DATE 2021), 2021, : 1090 - 1095
  • [42] Design and Implementation of Reversible Logic Based Ternary Content Addressable Memory
    Santhi, C.
    Babu, Moparthy Gurunadha
    SMART INTELLIGENT COMPUTING AND APPLICATIONS, VOL 2, 2020, 160 : 405 - 413
  • [43] Research on routing table compression and storing in ternary content addressable memory
    Liu, Gang
    Zhang, Deyun
    Li, Shenglei
    Gao, Lei
    Hsi-An Chiao Tung Ta Hsueh/Journal of Xi'an Jiaotong University, 2003, 37 (10): : 1025 - 1028
  • [44] A Content Addressable Memory Using Josephson Junctions
    Morisue, Mititada
    Kaneko, Masayuki
    Hosoya, Hiroo
    IEEE TRANSACTIONS ON APPLIED SUPERCONDUCTIVITY, 1991, 1 (01) : 48 - 53
  • [45] In-Memory Nearest Neighbor Search With Nanoelectromechanical Ternary Content-Addressable Memory
    Lee, Jae Seong
    Yoon, Jisoo
    Choi, Woo Young
    IEEE ELECTRON DEVICE LETTERS, 2022, 43 (01) : 154 - 157
  • [46] CONTENT-ADDRESSABLE MEMORY CELL WITH MNOS TRANSISTORS
    CARLSTEDT, G
    PETERSSON, GP
    JEPPSON, KO
    IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1973, SC 8 (05) : 338 - 343
  • [47] Low Power High Speed Ternary Content Addressable Memory Design using MOSFETs and Memristors.
    Tabassum, Shawana
    Parveen, Farhana
    Rashid, A. B. M. Harun-ur
    2014 INTERNATIONAL CONFERENCE ON ELECTRONICS AND COMMUNICATION SYSTEMS (ICECS), 2014,
  • [48] Low-Power Ternary Content-Addressable Memory Design Using a Segmented Match Line
    Baeg, Sanghyeon
    IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-REGULAR PAPERS, 2008, 55 (06) : 1485 - 1494
  • [49] A High-Density Ternary Content-Addressable Memory Using Single-Electron Transistors
    Degawa, Katsuhiko
    Aoki, Takafumi
    Higuchi, Tatsuo
    Inokawa, Hiroshi
    Nishiguchi, Katsuhiko
    Takahashi, Yasuo
    ISMVL 2006: 36TH INTERNATIONAL SYMPOSIUM ON MULTIPLE-VALUED LOGIC, 2006, : 116 - +
  • [50] Dynamic Ternary Content-Addressable Memory Is Indeed Promising: Design and Benchmarking Using Nanoelectromechanical Relays
    Zhong, Hongtao
    Cao, Shengjie
    Yang, Huazhong
    Li, Xueqing
    PROCEEDINGS OF THE 2021 DESIGN, AUTOMATION & TEST IN EUROPE CONFERENCE & EXHIBITION (DATE 2021), 2021, : 1100 - 1103
12345