Interrogation Properties of Ternary Content Addressable Memory Using a CMOS-SRAM Cell

被引：0

作者：

Hayakawa, Sho ^{[1
]}

Yoshida, Masahiro ^{[1
]}

机构：

[1] Tokai Univ, Grad Sch Informat & Telecommun Engn, Tokyo, Japan

来源：

PROCEEDINGS OF THE 2016 SAI COMPUTING CONFERENCE (SAI) | 2016年

关键词：

Static Ternary CAM; Interrogation Properties; Packet Switching; CAM;

D O I：

暂无

中图分类号：

TP39 [计算机的应用];

学科分类号：

081203 ; 0835 ;

摘要：

This paper describes new ternary content addressable memory (TCAM) in which a CMOS-SRAM cell is used as a storage element. The TCAM can store three states of "1", "0" and "Don't Care". Don't Care acts as wildcards during interrogation operations. Also, the interrogation properties of the proposed TCAM are analyzed in detail. The theoretical results are good coincidence with HSPICE simulation.

引用

页码：1361 / 1364

页数：4

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