Interrogation Properties of Ternary Content Addressable Memory Using a CMOS-SRAM Cell

被引：0
|
作者：
Hayakawa, Sho [1 ]
Yoshida, Masahiro [1 ]
机构：
[1] Tokai Univ, Grad Sch Informat & Telecommun Engn, Tokyo, Japan
来源：
PROCEEDINGS OF THE 2016 SAI COMPUTING CONFERENCE (SAI) | 2016年
关键词：
Static Ternary CAM; Interrogation Properties; Packet Switching; CAM;
D O I：
暂无
中图分类号：
TP39 [计算机的应用];
学科分类号：
081203 ; 0835 ;
摘要：
This paper describes new ternary content addressable memory (TCAM) in which a CMOS-SRAM cell is used as a storage element. The TCAM can store three states of "1", "0" and "Don't Care". Don't Care acts as wildcards during interrogation operations. Also, the interrogation properties of the proposed TCAM are analyzed in detail. The theoretical results are good coincidence with HSPICE simulation.
引用
收藏
页码：1361 / 1364
页数：4
相关论文
共 50 条
  • [21] Compact 5T2M ternary content addressable memory cell
    Rouhi, Sadegh
    Mirzakuchaki, Sattar
    2019 16TH INTERNATIONAL MULTI-CONFERENCE ON SYSTEMS, SIGNALS & DEVICES (SSD), 2019, : 674 - 678
  • [22] 20 GHz Silicon Integrated Optical Ternary Content Addressable Memory (CAM) Cell
    Giamougiannis, George
    Pappas, Christos
    Moschos, Theodoros
    Tsakyridis, Apostolos
    Moralis-Pegios, Miltiadis
    Vagionas, Christos
    London, Yanir
    Van Vaerenbergh, Thomas
    Tossoun, Bassem
    Pleros, Nikos
    2024 OPTICAL FIBER COMMUNICATIONS CONFERENCE AND EXHIBITION, OFC, 2024,
  • [23] Modeling and Design for Magnetoelectric Ternary Content Addressable Memory (TCAM)
    Narla, Siri
    Kumar, Piyush
    Laguna, Ann Franchesca
    Reis, Dayane
    Sharon, X. Sharon
    Niemier, Michael
    Naeemi, Azad
    IEEE JOURNAL ON EXPLORATORY SOLID-STATE COMPUTATIONAL DEVICES AND CIRCUITS, 2022, 8 (01): : 44 - 52
  • [24] Robust High Speed Ternary Magnetic Content Addressable Memory
    Gupta, Mohit Kumar
    Hasan, Mohd
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2015, 62 (04) : 1163 - 1169
  • [25] WDM Ternary Content-addressable Memory for Optical Links
    London, Yanir
    Van Vaerenbergh, Thomas
    Ramini, Luca
    Li, Can
    Graves, Catherine E.
    Fiorentino, Marco
    Beausoleil, Raymond G.
    2023 IEEE SILICON PHOTONICS CONFERENCE, SIPHOTONICS, 2023,
  • [26] Low power dual matchline ternary content addressable memory
    Manon, N
    Sachdev, M
    2004 IEEE INTERNATIONAL SYMPOSIUM ON CIRCUITS AND SYSTEMS, VOL 2, PROCEEDINGS, 2004, : 633 - 636
  • [27] Memristors-Based Ternary Content Addressable Memory (mTCAM)
    Zheng, Le
    Shin, Sangho
    Kang, Sung-Mo Steve
    2014 IEEE INTERNATIONAL SYMPOSIUM ON CIRCUITS AND SYSTEMS (ISCAS), 2014, : 2253 - 2256
  • [28] Hardware Emulation of Memristor Based Ternary Content Addressable Memory
    Bahloul, Mohamed A.
    Naous, Rawan
    Masmoudi, M.
    2017 14TH INTERNATIONAL MULTI-CONFERENCE ON SYSTEMS, SIGNALS & DEVICES (SSD), 2017, : 446 - 449
  • [29] High-Speed Memristive Ternary Content Addressable Memory
    Gnawali, Krishna P.
    Tragoudas, Spyros
    IEEE TRANSACTIONS ON EMERGING TOPICS IN COMPUTING, 2022, 10 (03) : 1349 - 1360
  • [30] Design of Asymmetric TCAM (Ternary Content-Addressable Memory) Cells Using FinFET
    Chang, Meng-Chou
    He, Kai-Lun
    Wang, Yu-Chieh
    2014 IEEE 3RD GLOBAL CONFERENCE ON CONSUMER ELECTRONICS (GCCE), 2014, : 358 - 359
12345