High Transconductance on AlGaN/GaN HEMT on (110) Silicon Substrate

被引：0

作者：

Gerbedoen, J-C ^{[1
]}

Soltani, A. ^{[1
]}

De Jaeger, J-C ^{[1
]}

Yvon, Cordier

机构：

[1] CNRS8520, IEMN, Villeneuve Dascq, France

来源：

2012 7TH EUROPEAN MICROWAVE INTEGRATED CIRCUITS CONFERENCE (EUMIC) | 2012年

关键词：

HEMT GaN; T-gate; (110) Silicon; RF performance; High transconductance; GATE;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

AlGaN/GaN HEMT was grown on (110)-oriented silicon substrate. These new transistors are fabricated with unrecessed T-shaped 45nm gate length, to simplify the process and are based on a three layer resist. The technology is similar to those used for devices on Si (111) substrate. A transconductance as high as 455mS/mm and a maximum drain-source current saturation of 1.36A.mm(-1) at V-GS=0V are obtained. Current gain transition frequency and maximum frequency oscillation of 63GHz and 106GHz respectively are also measured. These results are very promising for this new line of components.

引用

页码：413 / 416

页数：4

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