High Transconductance on AlGaN/GaN HEMT on (110) Silicon Substrate

被引：0
|
作者：
Gerbedoen, J-C [1 ]
Soltani, A. [1 ]
De Jaeger, J-C [1 ]
Yvon, Cordier
机构：
[1] CNRS8520, IEMN, Villeneuve Dascq, France
来源：
2012 7TH EUROPEAN MICROWAVE INTEGRATED CIRCUITS CONFERENCE (EUMIC) | 2012年
关键词：
HEMT GaN; T-gate; (110) Silicon; RF performance; High transconductance; GATE;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
AlGaN/GaN HEMT was grown on (110)-oriented silicon substrate. These new transistors are fabricated with unrecessed T-shaped 45nm gate length, to simplify the process and are based on a three layer resist. The technology is similar to those used for devices on Si (111) substrate. A transconductance as high as 455mS/mm and a maximum drain-source current saturation of 1.36A.mm(-1) at V-GS=0V are obtained. Current gain transition frequency and maximum frequency oscillation of 63GHz and 106GHz respectively are also measured. These results are very promising for this new line of components.
引用
收藏
页码：413 / 416
页数：4
相关论文
共 50 条
  • [11] AlGaN/GaN HEMT structures on ammono bulk GaN substrate
    Kruszewski, P.
    Prystawko, P.
    Kasalynas, I.
    Nowakowska-Siwinska, A.
    Krysko, M.
    Plesiewicz, J.
    Smalc-Koziorowska, J.
    Dwilinski, R.
    Zajac, M.
    Kucharski, R.
    Leszczynski, M.
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2014, 29 (07)
  • [12] Comparative analysis of parameter extraction techniques for AlGaN/GaN HEMT on silicon/sapphire substrate
    Majumdar, Shubhankar
    Bag, Ankush
    Biswas, Dhrubes
    MICROELECTRONICS RELIABILITY, 2017, 78 : 389 - 395
  • [13] High-transconductance AlGaN/GaN high-electron-mobility transistors on semi-insulating silicon carbide substrate
    Arulkumaran, S
    Egawa, T
    Ishikawa, H
    Jimbo, T
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 2001, 40 (10B): : L1081 - L1083
  • [14] Study of Ohmic Contact Formation on AlGaN/GaN HEMT with AlN spacer on Silicon Substrate
    Gerbedoen, J-C.
    Soltani, A.
    Mattalah, M.
    Telia, A.
    Troadec, D.
    Abdallah, B.
    Gautron, E.
    De Jaeger, J-C.
    2009 EUROPEAN MICROWAVE INTEGRATED CIRCUITS CONFERENCE (EUMIC 2009), 2009, : 136 - +
  • [15] Electron delay analysis and image charge effect in AlGaN/GaN HEMT on silicon substrate
    Agboton, A.
    Defrance, N.
    Altuntas, P.
    Avramovic, V.
    Cutivet, A.
    Ouhachi, R.
    De Jaeger, J. C.
    Bouzid-Driad, S.
    Maher, H.
    Renvoise, M.
    Frijlink, P.
    2013 PROCEEDINGS OF THE EUROPEAN SOLID-STATE DEVICE RESEARCH CONFERENCE (ESSDERC), 2013, : 57 - 60
  • [16] Intensive Study of Field-Plated AlGaN/GaN HEMT on Silicon Substrate for High Power RF Applications
    Kumar, J. S. Raj
    Nirmal, D.
    Hooda, Manish Kumar
    Singh, Surinder
    Ajayan, J.
    Arivazhagan, L.
    SILICON, 2022, 14 (08) : 4277 - 4282
  • [17] Intensive Study of Field-Plated AlGaN/GaN HEMT on Silicon Substrate for High Power RF Applications
    J. S. Raj Kumar
    D. Nirmal
    Manish Kumar Hooda
    Surinder Singh
    J. Ajayan
    L. Arivazhagan
    Silicon, 2022, 14 : 4277 - 4282
  • [18] Research on AlGaN/GaN HFET with high transconductance
    School of Information Engineering, Hebei University of Technology, Tianjin 300130, China
    不详
    Guti Dianzixue Yanjiu Yu Jinzhan, 2006, 3 (371-374):
  • [19] Growth and Fabrication of AlGaN/GaN HEMT on SiC Substrate
    Wong, Yuen-Yee
    Chiu, Yu-Sheng
    Luong, Tien-Tung
    Lin, Tai-Ming
    Ho, Yen-Teng
    Lin, Yue-Chin
    Chang, Edward Yi
    2012 10TH IEEE INTERNATIONAL CONFERENCE ON SEMICONDUCTOR ELECTRONICS (ICSE), 2012, : 729 - 732
  • [20] Si(111) as alternative substrate for AlGaN/GaN HEMT
    Dikme, Y
    Fieger, M
    Jessen, F
    Szymakowski, A
    Kalisch, H
    Woitok, JF
    van Gemmern, P
    Javorka, P
    Marso, M
    Kaluza, N
    Jansen, RH
    Heuken, M
    5TH INTERNATIONAL CONFERENCE ON NITRIDE SEMICONDUCTORS (ICNS-5), PROCEEDINGS, 2003, 0 (07): : 2385 - 2388
12345