Low specific on-resistance AlGaN/GaN HEMT on sapphire substrate

被引：0

作者：

Inada, Masaki ^{[1
]}

Yagi, Shuichi ^{[1
]}

Yamamoto, Yuki ^{[1
]}

Piao, Guanxi ^{[1
]}

Shimizu, Mitsuaki ^{[1
]}

Okumura, Hajime ^{[1
]}

Arai, Kazuo ^{[1
]}

机构：

[1] Natl Inst Adv Ind Sci & Technol, Power Elect Res Ctr, Cent 2,1-1-1 Umezono, Tsukuba, Ibaraki 3058568, Japan

来源：

PROCEEDINGS OF THE 18TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES & ICS | 2006年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

On-resistance of AlGaN/GaN HEMTs with MIS and MES gate structures has been investigated. In the case of the MES gate structure, the HEMT with specific on-resistance lower than 0.1 m Omega cm(2) was obtained by shortening the drain-source length to 2.2 mu m. The maximum transconductance g(m,max). and the off-state breakdown voltage were 220 mS/mm and 35 V, respectively. Tradeoff characteristic of the specific on-resistance and the breakdown voltage of the AlGaN/GaN ME S-gate HEMT exceeded theoretical limit of Si-based devices. In the case of the MIS-gate HEMTs, by shortening the source-drain length to 1.8 mu m, the specific on-resistance lower than 0.17 m Omega cm(2) and the maximum drain current of 920 mA/mm were obtained.

引用

页码：121 / +

页数：2

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