The effect of Co incorporation on electrical characteristics of n+/p shallow junction formed by dopant implantation into CoSi2 and anneal

被引：10

作者：

Park, JS ^{[1
]}

Sohn, DK

Bae, JU

Han, CH

Park, JW

机构：

[1] Hyundai Micro Elect Co Ltd, R&D Div, Cheongju 361725, South Korea

[2] Elect & Telecommun Res Inst, Basic Res Lab, Taejon 305600, South Korea

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2000年 / 47卷 / 05期

关键词：

Co traps; generation current; Poole-Frenkel barrier lowering; silicided junction;

D O I：

10.1109/16.841231

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The impact of Co incorporation on the electrical characteristics has been investigated in n(+)/p junction formed by dopant implantation into CoSi2 and drive-in anneal, The junctions were formed by As+ (30 or 40 keV, 1 x 10(16) cm(-2)) implantation into 35 nm-thick CoSi2 followed by drive-in annealing at 900 degrees C for 30 s in an N-2 ambient. Deeper junction implanted by As+ at 40 keV was not influenced by the Co incorporation. However, for shallower junction implanted by As+ at 30 keV, incorporation of Co atoms increased its leakage current, which were supposed to be dissociated from the CoSi2 layer by silicide agglomeration during annealing, The mechanism of such a high leakage current was found to be Poole-Frenkel barrier lowering induced by high density of Co traps.

引用

页码：994 / 998

页数：5

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