The effect of Co incorporation on electrical characteristics of n+/p shallow junction formed by dopant implantation into CoSi2 and anneal

被引：10
|
作者：
Park, JS [1 ]
Sohn, DK
Bae, JU
Han, CH
Park, JW
机构：
[1] Hyundai Micro Elect Co Ltd, R&D Div, Cheongju 361725, South Korea
[2] Elect & Telecommun Res Inst, Basic Res Lab, Taejon 305600, South Korea
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 2000年 / 47卷 / 05期
关键词：
Co traps; generation current; Poole-Frenkel barrier lowering; silicided junction;
D O I：
10.1109/16.841231
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The impact of Co incorporation on the electrical characteristics has been investigated in n(+)/p junction formed by dopant implantation into CoSi2 and drive-in anneal, The junctions were formed by As+ (30 or 40 keV, 1 x 10(16) cm(-2)) implantation into 35 nm-thick CoSi2 followed by drive-in annealing at 900 degrees C for 30 s in an N-2 ambient. Deeper junction implanted by As+ at 40 keV was not influenced by the Co incorporation. However, for shallower junction implanted by As+ at 30 keV, incorporation of Co atoms increased its leakage current, which were supposed to be dissociated from the CoSi2 layer by silicide agglomeration during annealing, The mechanism of such a high leakage current was found to be Poole-Frenkel barrier lowering induced by high density of Co traps.
引用
收藏
页码：994 / 998
页数：5
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