Electronic characteristics of P-Si CoSi2/Si Schottky junction formed by high flux metal ion implantation

被引：0

作者：

Li, Ying ^{[1
]}

Wang, Yuhua ^{[1
]}

Wang, Yan ^{[1
]}

Tian, Lilin ^{[1
]}

机构：

[1] Inst. of Microelectronics, Tsinghua Univ., Beijing 100084, China

来源：

Guti Dianzixue Yanjiu Yu Jinzhan/Research and Progress of Solid State Electronics | 2005年 / 25卷 / 01期

关键词：

Cobalt compounds - Current voltage characteristics - Ion implantation - Rapid thermal annealing - Silicon;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

The electronic characteristics of Schottky junction formed through metal ion implantation are investigated for the first time in this paper. The properties of Schottky junction are characterized by I-V and C-V measurements. Barrier height, series resistance and ideality factor are extracted based on the thermionic-emission theory. And the qualities of diodes formed under different annealing conditions are compared.

引用

页码：98 / 101

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