Electronic characteristics of P-Si CoSi2/Si Schottky junction formed by high flux metal ion implantation

被引：0
|
作者：
Li, Ying [1 ]
Wang, Yuhua [1 ]
Wang, Yan [1 ]
Tian, Lilin [1 ]
机构：
[1] Inst. of Microelectronics, Tsinghua Univ., Beijing 100084, China
来源：
Guti Dianzixue Yanjiu Yu Jinzhan/Research and Progress of Solid State Electronics | 2005年 / 25卷 / 01期
关键词：
Cobalt compounds - Current voltage characteristics - Ion implantation - Rapid thermal annealing - Silicon;
D O I：
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中图分类号：
学科分类号：
摘要：
The electronic characteristics of Schottky junction formed through metal ion implantation are investigated for the first time in this paper. The properties of Schottky junction are characterized by I-V and C-V measurements. Barrier height, series resistance and ideality factor are extracted based on the thermionic-emission theory. And the qualities of diodes formed under different annealing conditions are compared.
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页码：98 / 101
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