A Modified Charge-Pumping Method for the Characterization of Interface-Trap Generation in MOSFETs

被引：13

作者：

Huang, Daming ^{[1
,2
]}

Liu, W. J. ^{[1
,2
]}

Liu, Zhiying ^{[1
,2
]}

Liao, C. C. ^{[3
]}

Zhang, Li-Fei ^{[3
]}

Gan, Zhenghao ^{[3
]}

Wong, Waisum ^{[3
]}

Li, Ming-Fu ^{[1
,4
]}

机构：

[1] Fudan Univ, Sch Microelect, State Key ASIC & Syst, Shanghai 201203, Peoples R China

[2] Royal Inst Technol, Sch Informat & Commun Technol, S-10044 Stockholm, Sweden

[3] Semicond Mfg Int Corp, Shanghai 201203, Peoples R China

[4] Natl Univ Singapore, Dept Elect & Comp Engn, Silicon Nano Device Lab, Singapore 117576, Singapore

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2009年 / 56卷 / 02期

关键词：

Charge pumping (CP); interface traps; MOSFETs; negative-bias temperature instability (NBTI); reaction-diffusion model; BIAS TEMPERATURE INSTABILITY; OXIDE; IMPACT; NBTI;

D O I：

10.1109/TED.2008.2010585

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A novel recovery-free interface-trap measurement method is presented in detail. This method is the modification of the conventional charge pumping (CP) by extending the pulse low level to the stress-bias and minimizing the pulse high-level duty cycle to suppress the recovery effect. The method is applied to study the negative-bias temperature instability in p-MOSFETs. As compared with the conventional CP, a much larger interface-trap generation under stress is observed by the new method. A power law time dependence (similar to t(n)) of interface-trap generation is observed. The index n. is less than that derived from conventional CP and increases with temperature, demonstrating a dispersive process involved in the trap generation dynamics.

引用

页码：267 / 274

页数：8

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