A Modified Charge-Pumping Method for the Characterization of Interface-Trap Generation in MOSFETs

被引：13

作者：

Huang, Daming ^{[1
,2
]}

Liu, W. J. ^{[1
,2
]}

Liu, Zhiying ^{[1
,2
]}

Liao, C. C. ^{[3
]}

Zhang, Li-Fei ^{[3
]}

Gan, Zhenghao ^{[3
]}

Wong, Waisum ^{[3
]}

Li, Ming-Fu ^{[1
,4
]}

机构：

[1] Fudan Univ, Sch Microelect, State Key ASIC & Syst, Shanghai 201203, Peoples R China

[2] Royal Inst Technol, Sch Informat & Commun Technol, S-10044 Stockholm, Sweden

[3] Semicond Mfg Int Corp, Shanghai 201203, Peoples R China

[4] Natl Univ Singapore, Dept Elect & Comp Engn, Silicon Nano Device Lab, Singapore 117576, Singapore

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2009年 / 56卷 / 02期

关键词：

Charge pumping (CP); interface traps; MOSFETs; negative-bias temperature instability (NBTI); reaction-diffusion model; BIAS TEMPERATURE INSTABILITY; OXIDE; IMPACT; NBTI;

D O I：

10.1109/TED.2008.2010585

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A novel recovery-free interface-trap measurement method is presented in detail. This method is the modification of the conventional charge pumping (CP) by extending the pulse low level to the stress-bias and minimizing the pulse high-level duty cycle to suppress the recovery effect. The method is applied to study the negative-bias temperature instability in p-MOSFETs. As compared with the conventional CP, a much larger interface-trap generation under stress is observed by the new method. A power law time dependence (similar to t(n)) of interface-trap generation is observed. The index n. is less than that derived from conventional CP and increases with temperature, demonstrating a dispersive process involved in the trap generation dynamics.

引用

页码：267 / 274

页数：8

共 50 条

[21] IMPROVED PREDICTION OF INTERFACE-TRAP GENERATION IN NMOSTS
WOLTJER, R
PAULZEN, GM
IEEE ELECTRON DEVICE LETTERS, 1994, 15 (01) : 4 - 6
[22] Optical charge-pumping: A universal trap characterization technique for nanoscale floating body devices
Dept. Electrical Engineering, KAIST, Daejeon, Korea, Republic of
Dig Tech Pap Symp VLSI Technol, 2011, (190-191):
[23] Why Is Oxide-Trap Charge-Pumping Method Appropriate for Radiation-Induced Trap Depiction in MOSFET?
Djezzar, Boualem
Tahi, Hakim
Mokrani, Arezki
IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY, 2009, 9 (02) : 222 - 230
[24] Charge-mixer based on MOS interface-trap charge pump
Massari, N
Gottardi, M
ELECTRONICS LETTERS, 2006, 42 (03) : 151 - 152
[25] CHARACTERIZATION OF INTERFACE STATES IN SUBMICROMETER MOS-TRANSISTORS BY DIFFERENT CHARGE-PUMPING TECHNIQUES
AUTRAN, JL
SEIGNEUR, F
DELMAS, J
PLOSSU, C
BALLAND, B
JOURNAL DE PHYSIQUE III, 1993, 3 (10): : 1947 - 1961
[26] Latent interface-trap generation in commercial power VDMOSFETs
Jaksic, A
Pejovic, M
Ristic, G
Rakovic, S
RADECS 97: FOURTH EUROPEAN CONFERENCE ON RADIATION AND ITS EFFECTS ON COMPONENTS AND SYSTEMS, 1998, : 36 - 42
[27] Latent interface-trap generation in commercial power VDMOSFETs
Jaksic, A
Pejovic, M
Ristic, G
Rakovic, S
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1998, 45 (03) : 1365 - 1371
[28] CHARGE-PUMPING CHARACTERISTICS OF VIRGIN AND STRESSED LIGHTLY-DOPED DRAIN MOSFETS
HABAS, P
SOLID-STATE ELECTRONICS, 1995, 38 (04) : 891 - 904
[29] A SIMPLE CHARGE-PUMPING METHOD TO MEASURE THE LOGARITHMIC-TIME DEPENDENCE OF TRAPPED OXIDE CHARGE IN P-MOSFETS
BRAVAIX, A
VUILLAUME, D
MICROELECTRONIC ENGINEERING, 1992, 19 (1-4) : 469 - 472
[30] A SIMPLE TECHNIQUE FOR DETERMINING THE INTERFACE-TRAP DISTRIBUTION OF SUB-MICRON METAL-OXIDE-SEMICONDUCTOR TRANSISTORS BY THE CHARGE PUMPING METHOD
HOFMANN, F
KRAUTSCHNEIDER, WH
JOURNAL OF APPLIED PHYSICS, 1989, 65 (03) : 1358 - 1360

← 1 2 3 4 5 →