Charge-mixer based on MOS interface-trap charge pump

被引：1
|
作者：
Massari, N [1 ]
Gottardi, M [1 ]
机构：
[1] ITC Irst, Microsyst Div, I-38050 Trento, Italy
来源：
ELECTRONICS LETTERS | 2006年 / 42卷 / 03期
关键词：
Charge carriers - Charge transfer - Light modulation - MOS devices - Signal processing;
D O I：
10.1049/el:20064196
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A 3.3 V charge-mixer device ill a 0.35 mu m CMOS process detects the intensity and phase of a modulated signal. A two PMOS pair is Used as charge-mixer to exploit the interface-trap charge PUMP phenomenon. Using clocking between accumulation and inversion, the two transistors perform a voltage-to-charge conversion of the input signal and transfer this charge to file two outputs synchronously to the applied signal.
引用
收藏
页码：151 / 152
页数：2
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