Oxide-Trap Charge-Pumping for Radiation Reliability Issue in MOS Devices

We have conducted a critical comparison between OTCP and classical methods like SubThreshold Slop (STS), Mid-Gap (MG), Capacitance Voltage (CV), Dual-Transistor Charge-Pumping (DTCP), and Dual-Transistor Border-trap (DTBT), giving a clear insight on the benefits and limitations of OTCP. According to the experimental data, the OTCP method is often more accurate than the classical methods. On one side, OTCP offers more accurate densities of radiation-induced interface-traps (Delta N(it)) and border-trap (Delta N(bt)) while STS and MG overestimate Delta N(it) because both interface- and border-trap are sensed like interface-trap. On the other side, OTCP estimates Delta N(it), Delta N(bt), and oxide-trap (Delta N(ot)) for N- and P-MOS separately, while DTCP and DTBT give average densities for whole N-MOS and P-MOS devices. Finally, Delta N(ot) obtained by OTCP is in excellent agreement with that given by CV. But, they show a slight discrepancy in Delta N(it) extraction.