Hydrogen sensing properties of a Pd/SiO2/AlGaN-based MOS diode

被引：21

作者：

Chang, Chung-Fu ^{[1
]}

Tsai, Tsung-Han ^{[1
]}

Chen, Huey-Ing ^{[2
]}

Lin, Kun-Wei

Chen, Tzu-Pin ^{[1
]}

Chen, Li-Yang ^{[1
]}

Liu, Yi-Chun ^{[1
]}

Liu, Wen-Chau ^{[1
]}

机构：

[1] Natl Cheng Kung Univ, Dept Elect Engn, Inst Microelect, Tainan 70101, Taiwan

[2] Natl Cheng Kung Univ, Dept Chem Engn, Tainan 70101, Taiwan

来源：

ELECTROCHEMISTRY COMMUNICATIONS | 2009年 / 11卷 / 01期

关键词：

Pd; AlGaN; SiO2; Schottky diode; Hydrogen; MECHANISM; GAN;

D O I：

10.1016/j.elecom.2008.10.031

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

Hydrogen sensing properties of a Pd/AlGaN-based Schottky diode are improved by the deposition Of SiO2 at the metal/semi conductor (MS) interface. The wide Schottky barrier height variation of the MOS diode could be attributed to the large electric field across the SiO2 layer. This leads to the presence of more hydrogen dipoles caused by the polarization effect. The sensing response of the MOS diode at room temperature (1.3 x 10(5)) is comparable to that of the MS one at 150 degrees C (2.04 x 10(5)). Thus, the MOS-type sensing device shows the benefit of low-temperature operation. Kinetic analyses confirm that the short response times of the MOS diode are attributed to high reaction rate at the Pd/SiO2, interface. (C) 2008 Elsevier B.V. All rights reserved.

引用

页码：65 / 67

页数：3

共 50 条

[21] Sensing dynamics and mechanism of a Pd/AlGaN/GaN Schottky diode type hydrogen sensor
Akazawa, Masamichi
Hasegawa, Hideki
PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 4 NO 7 2007, 2007, 4 (07): : 2629 - +
[22] Catalytic properties of Pd/SiO2 and Pt/SiO2 multilayer stacks
Khatko, VV
Soltis, RE
McBride, JR
Nietering, KE
SENSORS AND ACTUATORS B-CHEMICAL, 2001, 77 (1-2) : 548 - 554
[23] Atomic Layer Deposition of SiO2 for AlGaN/GaN MOS-HFETs
Kirkpatrick, Casey J.
Lee, Bongmook
Suri, Rahul
Yang, Xiangyu
Misra, Veena
IEEE ELECTRON DEVICE LETTERS, 2012, 33 (09) : 1240 - 1242
[24] High sensing response Pd/GaN hydrogen sensors with a porous-like mixture of Pd and SiO2
Chiu, Shao-Yen
Huang, Hsuan-Wei
Liang, Kun-Chieh
Huang, Tze-Hsuan
Liu, Kang-Ping
Tsai, Jung-Hui
Lour, Wen-Shiung
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2009, 24 (04)
[25] Comparison of interfacial and electronic properties of annealed Pd/SiC and Pd/SiO2/SiC Schottky diode sensors
Chen, Liang-Yu
Hunter, Gary W.
Neudeck, Philip G.
Bansal, Gaurav
Petit, Jeremy B.
Knight, Dak
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, 1997, 15 (3 Pt 1): : 1228 - 1234
[26] Comparison of interfacial and electronic properties of annealed Pd/SiC and Pd/SiO2/SiC Schottky diode sensors
Chen, LY
Hunter, GW
Neudeck, PG
Bansal, G
Petit, JB
Knight, D
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 1997, 15 (03): : 1228 - 1234
[27] KINETICS OF HYDROGEN ADSORPTION AT THE PD/SIO2 INTERFACE
RYE, RR
RICCO, AJ
ABSTRACTS OF PAPERS OF THE AMERICAN CHEMICAL SOCIETY, 1987, 194 : 118 - COLL
[28] Deep centers in AlGaN-based light emitting diode structures
Polyakov, AY
Smirnov, NB
Govorkov, AV
Mil'vidskii, MG
Usikov, AS
Pushnyi, BV
Lundin, WV
SOLID-STATE ELECTRONICS, 1999, 43 (10) : 1929 - 1936
[29] REACTION OF NEOPENTANE WITH HYDROGEN OVER PD/SIO2
KARPINSKI, Z
BUTT, JB
SACHTLER, WMH
JOURNAL OF CATALYSIS, 1989, 119 (02) : 521 - 524
[30] AlGaN-based deep UV LEDs for fluorescence sensing
Vitta, P
Kurilcik, N
Novickovas, A
Jursenas, S
Calkauskas, H
Zukauskas, A
Gaska, R
OPTICALLY BASED BIOLOGICAL AND CHEMICAL SENSING FOR DEFENCE, 2004, 5617 : 249 - 260

← 1 2 3 4 5 →