Comparison of interfacial and electronic properties of annealed Pd/SiC and Pd/SiO2/SiC Schottky diode sensors

被引：0
|
作者：
Chen, Liang-Yu [1 ]
Hunter, Gary W. [1 ]
Neudeck, Philip G. [1 ]
Bansal, Gaurav [1 ]
Petit, Jeremy B. [1 ]
Knight, Dak [1 ]
机构：
[1] NASA Lewis Research Cent, Cleveland, United States
来源：
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films | 1997年 / 15卷 / 3 Pt 1期
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页码：1228 / 1234
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