Interface properties of N2O-annealed SiO2/SiC system

被引：1
|
作者：
Chakraborty, S [1 ]
Lai, PT [1 ]
Chan, CL [1 ]
Cheng, YC [1 ]
机构：
[1] Univ Hong Kong, Dept Elect & Elect Engn, Hong Kong, Peoples R China
来源：
2000 IEEE HONG KONG ELECTRON DEVICES MEETING, PROCEEDINGS | 2000年
关键词：
D O I：
10.1109/HKEDM.2000.904227
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The electrical properties of dry-oxidized, N2O-annealed n-type 6H-SiC metal-oxide-semiconductor (MOS) capacitors are investigated at room temperature. As compared to conventional dry-oxidized device, although the N2O-annealed device has higher oxide-charge density, it shows smaller increase in interface-state density under high-field stress. On the other hand, the stress measurements indicate that dry-oxidized device has fewer pre-existing acceptor-type interface states and oxide traps. In summary, N2O nitridation improves the hardness of SiO2/n-type SIC interface and the oxide quality under high-field stress.
引用
收藏
页码：108 / 111
页数：4
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