Interface properties of N2O-annealed SiO2/SiC system

被引：1

作者：

Chakraborty, S ^{[1
]}

Lai, PT ^{[1
]}

Chan, CL ^{[1
]}

Cheng, YC ^{[1
]}

机构：

[1] Univ Hong Kong, Dept Elect & Elect Engn, Hong Kong, Peoples R China

来源：

2000 IEEE HONG KONG ELECTRON DEVICES MEETING, PROCEEDINGS | 2000年

关键词：

D O I：

10.1109/HKEDM.2000.904227

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The electrical properties of dry-oxidized, N2O-annealed n-type 6H-SiC metal-oxide-semiconductor (MOS) capacitors are investigated at room temperature. As compared to conventional dry-oxidized device, although the N2O-annealed device has higher oxide-charge density, it shows smaller increase in interface-state density under high-field stress. On the other hand, the stress measurements indicate that dry-oxidized device has fewer pre-existing acceptor-type interface states and oxide traps. In summary, N2O nitridation improves the hardness of SiO2/n-type SIC interface and the oxide quality under high-field stress.

引用

页码：108 / 111

页数：4

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