Characterization of SiO2/SiC interfaces annealed in N2O or POCl3

被引：10

作者：

Fiorenza, Patrick ^{[1
]}

Swanson, Lukas K. ^{[1
]}

Vivona, Marilena ^{[1
]}

Giannazzo, Filippo ^{[1
]}

Bongiorno, Corrado ^{[1
]}

Lorenti, Simona ^{[2
]}

Frazzetto, Alessia ^{[2
]}

Roccaforte, Fabrizio ^{[1
]}

机构：

[1] CNR IMM, Str 8,5 Zona Ind, I-95121 Catania, Italy

[2] STMicroelect, Catania, Italy

来源：

SILICON CARBIDE AND RELATED MATERIALS 2013, PTS 1 AND 2 | 2014年 / 778-780卷

关键词：

4H-SiC; SiO2; Post-oxidadion-Deposition Annealing; GLASS;

D O I：

10.4028/www.scientific.net/MSF.778-780.623

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

This paper reports a comparative characterization of SiO2/SiC interfaces subjected to post-oxide-deposition annealing in N2O or POCl3. Annealing process of the gate oxide in POCl3 allowed to achieve a notable increase of the MOSFET channel mobility (up to 108 cm(2)V(-1)s(-1)) with respect to the N2O annealing (about 20 cm(2)V(-1)s(-1)), accompanied by a different temperature behaviour of the electrical parameters in the two cases. Structural and compositional analyses revealed a different surface morphology of the oxide treated in POCl3, as a consequence of the strong incorporation of phosphorous inside the SiO2 matrix during annealing. This latter explained the instability of the electrical behaviour of MOS capacitors annealed in POCl3.

引用

页码：623 / +

页数：2

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