SiO2/4H-SiC interface doping during post-deposition-annealing of the oxide in N2O or POCl3

被引：62

作者：

Fiorenza, P. ^{[1
]}

Giannazzo, F. ^{[1
]}

Vivona, M. ^{[1
]}

La Magna, A. ^{[1
]}

Roccaforte, F. ^{[1
]}

机构：

[1] CNR IMM, I-95121 Catania, Italy

来源：

APPLIED PHYSICS LETTERS | 2013年 / 103卷 / 15期

关键词：

4H-SIC MOSFETS; NITRIC-OXIDE; PHOSPHORUS; MOBILITY; IMPLANTATION; PASSIVATION; TEMPERATURE; CARBIDE; DEVICES; STATES;

D O I：

10.1063/1.4824980

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In this Letter, we report a quantitative analysis of the n-type doping occurring at SiO2/4H-SiC interfaces during post-deposition-annealing (PDA) in N2O or POCl3 of a 45 nm thick oxide. In particular, a nanoscale characterization using scanning capacitance microscopy on the cross section of metal-oxide-semiconductor capacitors allowed to determine the electrically active nitrogen and phosphorous concentration under the SiO2 layer after PDA in N2O and POCl3, i.e., 5 x 10(17) cm(-3) and 4.5 x 10(18) cm(-3), respectively. The technological implications have been discussed considering the possible impact of a PDA-induced "counter doping" of the p-type body region of a n-channel metal-oxide-semiconductor-field-effect-transistor on the device threshold voltage. (C) 2013 AIP Publishing LLC.

引用

页数：4

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