Hydrogen sensing properties of a Pd/SiO2/AlGaN-based MOS diode

被引：21

作者：

Chang, Chung-Fu ^{[1
]}

Tsai, Tsung-Han ^{[1
]}

Chen, Huey-Ing ^{[2
]}

Lin, Kun-Wei

Chen, Tzu-Pin ^{[1
]}

Chen, Li-Yang ^{[1
]}

Liu, Yi-Chun ^{[1
]}

Liu, Wen-Chau ^{[1
]}

机构：

[1] Natl Cheng Kung Univ, Dept Elect Engn, Inst Microelect, Tainan 70101, Taiwan

[2] Natl Cheng Kung Univ, Dept Chem Engn, Tainan 70101, Taiwan

来源：

ELECTROCHEMISTRY COMMUNICATIONS | 2009年 / 11卷 / 01期

关键词：

Pd; AlGaN; SiO2; Schottky diode; Hydrogen; MECHANISM; GAN;

D O I：

10.1016/j.elecom.2008.10.031

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

Hydrogen sensing properties of a Pd/AlGaN-based Schottky diode are improved by the deposition Of SiO2 at the metal/semi conductor (MS) interface. The wide Schottky barrier height variation of the MOS diode could be attributed to the large electric field across the SiO2 layer. This leads to the presence of more hydrogen dipoles caused by the polarization effect. The sensing response of the MOS diode at room temperature (1.3 x 10(5)) is comparable to that of the MS one at 150 degrees C (2.04 x 10(5)). Thus, the MOS-type sensing device shows the benefit of low-temperature operation. Kinetic analyses confirm that the short response times of the MOS diode are attributed to high reaction rate at the Pd/SiO2, interface. (C) 2008 Elsevier B.V. All rights reserved.

引用

页码：65 / 67

页数：3

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