Improved RF Modeling of Intrinsic Output Equivalent Circuit for HR PD-SOI MOSFETs

被引：0
|
作者：
Lee, Changjo [1 ]
Lee, Seonghearn [1 ]
机构：
[1] Hankuk Univ Foreign Studies, Dept Elect Engn, Yongin, South Korea
来源：
2018 IEEE INTERNATIONAL MEETING FOR FUTURE OF ELECTRON DEVICES, KANSAI (IMFEDK) | 2018年
基金：
新加坡国家研究基金会;
关键词：
SOI MOSFET; high resistivity(HR); PD-SOI; RF; modeling; parameter extraction; equivalent circuit;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The low-frequency effect showing abrupt change of intrinsic output capacitance and conductance for high resistivity(HR) PD-SOI MOSFETs is well modeled using an improved RF output equivalent circuit with a series RC network. The output circuit parameters are accurately extracted by fitting frequency-dependent output capacitance and conductance equations to each measured data. The good agreements between measured and modeled Y-22-parameter are obtained from 50 MHz to 10GHz.
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页数：2
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