Improved RF Modeling of Intrinsic Output Equivalent Circuit for HR PD-SOI MOSFETs

被引：0

作者：

Lee, Changjo ^{[1
]}

Lee, Seonghearn ^{[1
]}

机构：

[1] Hankuk Univ Foreign Studies, Dept Elect Engn, Yongin, South Korea

来源：

2018 IEEE INTERNATIONAL MEETING FOR FUTURE OF ELECTRON DEVICES, KANSAI (IMFEDK) | 2018年

基金：

新加坡国家研究基金会;

关键词：

SOI MOSFET; high resistivity(HR); PD-SOI; RF; modeling; parameter extraction; equivalent circuit;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The low-frequency effect showing abrupt change of intrinsic output capacitance and conductance for high resistivity(HR) PD-SOI MOSFETs is well modeled using an improved RF output equivalent circuit with a series RC network. The output circuit parameters are accurately extracted by fitting frequency-dependent output capacitance and conductance equations to each measured data. The good agreements between measured and modeled Y-22-parameter are obtained from 50 MHz to 10GHz.

引用

页数：2

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