Body Related Parasitic Parameters Extraction for PD-SOI MOSFETs Using Four-Port Network

Thiswork presents an extraction method for body related parameters of partially-depleted (PD) silicon-on-insulator (SOI) MOSFET with multi-fingers. For body contacted MOSFETs, body-to-gate capacitance (C-gb) and body resistance (R-b) are difficult to extract from conventional two-port network structures. By using four-port network, C-gb and C-gs can be extracted from the imaginary part of the conductance parameters (V-parameters) which are converted from the scanting parameters (S-parameters). The results show that four-port network could be a supplementary technology for optimization and modeling the body contacted MOSFETs in high frequency application.