Body Related Parasitic Parameters Extraction for PD-SOI MOSFETs Using Four-Port Network

被引：0
|
作者：
Lu, Kai [1 ]
Chang, Yongwei [1 ]
Yang, Wenwei [1 ]
Dong, Yemin [1 ]
机构：
[1] Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China
来源：
2018 IEEE SOI-3D-SUBTHRESHOLD MICROELECTRONICS TECHNOLOGY UNIFIED CONFERENCE (S3S) | 2018年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Thiswork presents an extraction method for body related parameters of partially-depleted (PD) silicon-on-insulator (SOI) MOSFET with multi-fingers. For body contacted MOSFETs, body-to-gate capacitance (C-gb) and body resistance (R-b) are difficult to extract from conventional two-port network structures. By using four-port network, C-gb and C-gs can be extracted from the imaginary part of the conductance parameters (V-parameters) which are converted from the scanting parameters (S-parameters). The results show that four-port network could be a supplementary technology for optimization and modeling the body contacted MOSFETs in high frequency application.
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