A low-vollage 12GHz VCO in 0.13 μm CMOS for OFDM applications

被引：0
|
作者：
Han, YP [1 ]
Larson, LE [1 ]
Lie, DYC [1 ]
机构：
[1] Univ Calif San Diego, Ctr Wireless Commun, La Jolla, CA 92093 USA
来源：
2006 TOPICAL MEETING ON SILICON MONOLITHIC INTEGRATED CIRCUITS IN RF SYSTEMS, DIGEST OF PAPERS | 2006年
关键词：
CMOS; VCO; high frequency; low voltage; phase noise;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A low voltage 1.2GHz VCO is fabricated in a 0.13 mu m CMOS process. The VCO with a 0.8V supply consumes 6mA. The measured phase noise is -84dBc/Hz at 100kHz and -106dBc/Hz at 1MHz offset from the center frequency. Design optimization techniques for high performance VCOs in a low voltage CMOS process are discussed.
引用
收藏
页码：379 / +
页数：2
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