A 0.6 V, 4.32 mW, 68 GHz low phase-noise VCO with intrinsic-tuned technique in 0.13 μm CMOS

被引：18
|
作者：
Chen, Hsien-Ku [1 ]
Chen, Hsien-Jui [2 ]
Chang, Da-Chiang [3 ]
Juang, Ying-Zong
Lu, Shey-Shi [1 ]
机构：
[1] Natl Taiwan Univ, Grad Inst Elect Engn, Taipei 10617, Taiwan
[2] Faraday Technol Corp, Hsinchu, Taiwan
[3] Chip Implementat Ctr, Natl Appl Res Labs, Hsinchu 300, Taiwan
来源：
IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS | 2008年 / 18卷 / 07期
关键词：
accumulation-mode; back-gate; CMOS; intrinsic tuned; millimeter-wave (MMW); phase noise; quality factor; small chip size; varactor; voltage controlled oscillator (VCO);
D O I：
10.1109/LMWC.2008.925106
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
An intrinsic-tuned, 68 GHz voltage controlled oscillator (VCO) without an extra on-chip accumulation-mode metal oxide semiconductor (MOS)-varactor is demonstrated in a standard, 0.13 mu m CMOS technology. This VCO exhibits phase noises of -98.4 dBc/Hz and -115.2 dBc/Hz; at 1 and 10 MHz offset, respectively, along with a tuning range of 4.5% even under a small power consumption of 4.32 mW. Besides, the highest figure-of-merit (taking frequency tuning range into account) of - 182 dBc/Hz under the 1 MHz offset condition is achieved among all previously reported >60 GHz CMOS-based VCOs, which is attributed to the proposed intrinsic tuning mechanism.
引用
收藏
页码：467 / 469
页数：3
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