A low-vollage 12GHz VCO in 0.13 μm CMOS for OFDM applications

被引：0

作者：

Han, YP ^{[1
]}

Larson, LE ^{[1
]}

Lie, DYC ^{[1
]}

机构：

[1] Univ Calif San Diego, Ctr Wireless Commun, La Jolla, CA 92093 USA

来源：

2006 TOPICAL MEETING ON SILICON MONOLITHIC INTEGRATED CIRCUITS IN RF SYSTEMS, DIGEST OF PAPERS | 2006年

关键词：

CMOS; VCO; high frequency; low voltage; phase noise;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A low voltage 1.2GHz VCO is fabricated in a 0.13 mu m CMOS process. The VCO with a 0.8V supply consumes 6mA. The measured phase noise is -84dBc/Hz at 100kHz and -106dBc/Hz at 1MHz offset from the center frequency. Design optimization techniques for high performance VCOs in a low voltage CMOS process are discussed.

引用

页码：379 / +

页数：2

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