Point defect creation by proton and carbon irradiation of α-Ga2O3

被引：13

作者：

Polyakov, Alexander Y. ^{[1
]}

Nikolaev, Vladimir, I ^{[2
,3
]}

Meshkov, Igor N. ^{[4
]}

Siemek, Krzysztof ^{[4
,10
]}

Lagov, Petr B. ^{[1
,5
]}

Yakimov, Eugene B. ^{[1
,6
]}

Pechnikov, Alexei, I ^{[2
,3
]}

Orlov, Oleg S. ^{[4
]}

Sidorin, Alexey A. ^{[4
]}

Stepanov, Sergey, I ^{[2
,3
]}

Shchemerov, Ivan, V ^{[1
]}

Vasilev, Anton A. ^{[1
]}

Chernykh, Alexey, V ^{[1
]}

Losev, Anton A. ^{[7
]}

Miliachenko, Alexandr D. ^{[7
]}

Khrisanov, Igor A. ^{[7
]}

Pavlov, Yu S. ^{[5
]}

Kobets, U. A. ^{[8
]}

Pearton, Stephen J. ^{[9
]}

机构：

[1] Natl Univ Sci & Technol MISiS, Leninsky Pr 4, Moscow 119049, Russia

[2] Ioffe Inst, 26 Polytekhnicheskaya Str, St Petersburg 194021, Russia

[3] Perfect Crystals LLC, 28 Politekhnicheskaya Str, St Petersburg 194064, Russia

[4] Joint Inst Nucl Res, Joliot Curie 6, Moscow 141980, Russia

[5] Russian Acad Sci IPCE RAS, Lab Radiat Technol, AN Frumkin Inst Phys Chem & Electrochem, Moscow 119071, Russia

[6] Russian Acad Sci, Inst Microelect Technol & High Pur Mat, 6 Academician Ossipyan Str, Chernogolovka 142432, Moscow Region, Russia

[7] NRC, Kurchatov Inst, Inst Theoret & Expt Phys, B Cheremushkinskaya 25, Moscow 117218, Russia

[8] Inst Phys & Power Engn, Bondarenko Sq 1, Obninsk 249033, Russia

[9] Univ Florida, Dept Mat Sci & Engn, Gainesville, FL 32611 USA

[10] Polish Acad Sci, Inst Nucl Phys, PL-31342 Krakow, Poland

来源：

JOURNAL OF APPLIED PHYSICS | 2022年 / 132卷 / 03期

基金：

美国国家科学基金会;

关键词：

SPECTROSCOPY;

D O I：

10.1063/5.0100359

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Films of alpha-Ga2O3 grown by Halide Vapor Phase Epitaxy (HVPE) were irradiated with protons at energies of 330, 400, and 460 keV with fluences 6 x 10(15) cm(-2) and with 7 MeV C4+ ions with a fluence of 1.3 x 10(13) cm(-2) and characterized by a suite of measurements, including Photoinduced Transient Current Spectroscopy (PICTS), Thermally Stimulated Current (TSC), Microcathodoluminescence (MCL), Capacitance-frequency (C-f), photocapacitance and Admittance Spectroscopy (AS), as well as by Positron Annihilation Spectroscopy (PAS). Proton irradiation creates a conducting layer near the peak of the ion distribution and vacancy defects distribution and introduces deep traps at E-c-0.25, 0.8, and 1.4 eV associated with Ga interstitials, gallium-oxygen divacancies V-Ga-V-O, and oxygen vacancies V-O. Similar defects were observed in C implanted samples. The PAS results can also be interpreted by assuming that the observed changes are due to the introduction of V-Ga and V-Ga-V-O.

引用

页数：9

共 50 条

[31] A comparative study of Ir/Ga2O3, Pt/Ga2O3, and Ru/Ga2O3 catalysts in selective hydrogenation of crotonaldehyde
E. Gebauer-Henke
J. Farbotko
R. Touroude
J. Rynkowski
Kinetics and Catalysis, 2008, 49 : 574 - 580
[32] Luminescence and Conductivity of β-Ga2O3 and β-Ga2O3:Mg Single Crystals
Vasyltsiv, V.
Kostyk, L.
Tsvetkova, O.
Lys, R.
Kushlyk, M.
Pavlyk, B.
Luchechko, A.
ACTA PHYSICA POLONICA A, 2022, 141 (04) : 312 - 318
[33] Defect level in κ-Ga2O3 revealed by thermal admittance spectroscopy
Langorgen, Amanda
Frodason, Ymir Kalmann
Karsthof, Robert
von Wenckstern, Holger
Jensen, Ingvild Julie Thue
Vines, Lasse
Grundmann, Marius
JOURNAL OF APPLIED PHYSICS, 2023, 134 (01)
[34] Growth and defect characterization of doped and undoped β-Ga2O3 crystals
McCloy, John S.
Jesenovec, Jani
Dutton, Benjamin L.
Pansegrau, Christopher
Remple, Cassandra
Weber, Marc H.
Swain, Santosh
McCluskey, Matthew
Scarpulla, Michael
OXIDE-BASED MATERIALS AND DEVICES XIII, 2022, 12002
[35] Defect Structure and Luminescence of κ-Ga2O3 Micro-Monocrystals
Vyvenko, Oleg F.
Shapenkov, Sevastian V.
Ubyivovk, Eugene V.
Bondarenko, Anton S.
Varygin, Grigorii V.
Pechnikov, Alexey I.
Nikolaev, Vladimir I.
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 2025, 262 (02):
[36] Effects of 300-MeV Proton Irradiation on Electrical Properties of β-Ga2O3 Schottky Barrier Diodes
Li, Xing
Fu, Weili
Yue, Shaozhong
Zhang, Xiaoning
Liang, Xi
Chen, Baiwei
Zhang, Mowen
Peng, Chao
Zhang, Zhangang
Zhang, Hong
Lei, Zhifeng
Ma, Teng
Yang, Jia-Yue
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2024, 71 (08) : 4549 - 4555
[37] Influence of High-Dose 80 MeV Proton Irradiation on the Electronic Structure and Photoluminescence of β-Ga2O3
Kejia Wang
Rongxing Cao
Bo Mei
Hongwei Zhang
He Lv
Lin Zhao
Yuxiong Xue
Xianghua Zeng
Journal of Electronic Materials, 2023, 52 : 7718 - 7727
[38] 10 MeV proton damage in β-Ga2O3 Schottky rectifiers
Yang, Jiancheng
Chen, Zhiting
Ren, Fan
Pearton, S. J.
Yang, Gwangseok
Kim, Jihyun
Lee, Jonathan
Flitsiyan, Elena
Chernyak, Leonid
Kuramata, Akito
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2018, 36 (01):
[39] Proton damage effects in double polymorph γ/β-Ga2O3 diodes
Polyakov, Alexander Y.
Vasilev, Anton A.
Kochkova, Anastasiia I.
Shchemerov, Ivan V.
Yakimov, Eugene B.
Miakonkikh, Andrej V.
Chernykh, Alexei V.
Lagov, Petr B.
Pavlov, Yrii S.
Doroshkevich, A. S.
Isaev, R. Sh.
Romanov, Andrei A.
Alexanyan, Luiza A.
Matros, Nikolai
Azarov, Alexander
Kuznetsov, Andrej
Pearton, Stephen
JOURNAL OF MATERIALS CHEMISTRY C, 2024, 12 (03) : 1020 - 1029
[40] Potential for neutron and proton transmutation doping of GaN and Ga2O3
Logan, Julie V.
Frantz, Elias B.
Casias, Lilian K.
Short, Michael P.
Morath, Christian P.
Webster, Preston T.
MATERIALS ADVANCES, 2020, 1 (01): : 45 - 53

← 1 2 3 4 5 →