Point defect creation by proton and carbon irradiation of α-Ga2O3

被引：13

作者：

Polyakov, Alexander Y. ^{[1
]}

Nikolaev, Vladimir, I ^{[2
,3
]}

Meshkov, Igor N. ^{[4
]}

Siemek, Krzysztof ^{[4
,10
]}

Lagov, Petr B. ^{[1
,5
]}

Yakimov, Eugene B. ^{[1
,6
]}

Pechnikov, Alexei, I ^{[2
,3
]}

Orlov, Oleg S. ^{[4
]}

Sidorin, Alexey A. ^{[4
]}

Stepanov, Sergey, I ^{[2
,3
]}

Shchemerov, Ivan, V ^{[1
]}

Vasilev, Anton A. ^{[1
]}

Chernykh, Alexey, V ^{[1
]}

Losev, Anton A. ^{[7
]}

Miliachenko, Alexandr D. ^{[7
]}

Khrisanov, Igor A. ^{[7
]}

Pavlov, Yu S. ^{[5
]}

Kobets, U. A. ^{[8
]}

Pearton, Stephen J. ^{[9
]}

机构：

[1] Natl Univ Sci & Technol MISiS, Leninsky Pr 4, Moscow 119049, Russia

[2] Ioffe Inst, 26 Polytekhnicheskaya Str, St Petersburg 194021, Russia

[3] Perfect Crystals LLC, 28 Politekhnicheskaya Str, St Petersburg 194064, Russia

[4] Joint Inst Nucl Res, Joliot Curie 6, Moscow 141980, Russia

[5] Russian Acad Sci IPCE RAS, Lab Radiat Technol, AN Frumkin Inst Phys Chem & Electrochem, Moscow 119071, Russia

[6] Russian Acad Sci, Inst Microelect Technol & High Pur Mat, 6 Academician Ossipyan Str, Chernogolovka 142432, Moscow Region, Russia

[7] NRC, Kurchatov Inst, Inst Theoret & Expt Phys, B Cheremushkinskaya 25, Moscow 117218, Russia

[8] Inst Phys & Power Engn, Bondarenko Sq 1, Obninsk 249033, Russia

[9] Univ Florida, Dept Mat Sci & Engn, Gainesville, FL 32611 USA

[10] Polish Acad Sci, Inst Nucl Phys, PL-31342 Krakow, Poland

来源：

JOURNAL OF APPLIED PHYSICS | 2022年 / 132卷 / 03期

基金：

美国国家科学基金会;

关键词：

SPECTROSCOPY;

D O I：

10.1063/5.0100359

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Films of alpha-Ga2O3 grown by Halide Vapor Phase Epitaxy (HVPE) were irradiated with protons at energies of 330, 400, and 460 keV with fluences 6 x 10(15) cm(-2) and with 7 MeV C4+ ions with a fluence of 1.3 x 10(13) cm(-2) and characterized by a suite of measurements, including Photoinduced Transient Current Spectroscopy (PICTS), Thermally Stimulated Current (TSC), Microcathodoluminescence (MCL), Capacitance-frequency (C-f), photocapacitance and Admittance Spectroscopy (AS), as well as by Positron Annihilation Spectroscopy (PAS). Proton irradiation creates a conducting layer near the peak of the ion distribution and vacancy defects distribution and introduces deep traps at E-c-0.25, 0.8, and 1.4 eV associated with Ga interstitials, gallium-oxygen divacancies V-Ga-V-O, and oxygen vacancies V-O. Similar defects were observed in C implanted samples. The PAS results can also be interpreted by assuming that the observed changes are due to the introduction of V-Ga and V-Ga-V-O.

引用

页数：9

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