Influence of High-Dose 80 MeV Proton Irradiation on the Electronic Structure and Photoluminescence of β-Ga2O3

被引：0
|
作者：
Kejia Wang
Rongxing Cao
Bo Mei
Hongwei Zhang
He Lv
Lin Zhao
Yuxiong Xue
Xianghua Zeng
机构：
[1] Yangzhou University,College of Physics Science and Technology
[2] Yangzhou University,College of Electrical, Energy and Power Engineering
[3] China Academy of Space Technology,Institute of Special Environments Physical Sciences
[4] Harbin Institute of Technology,undefined
来源：
Journal of Electronic Materials | 2023年 / 52卷
关键词：
β-Ga; O; proton irradiation; UV photoluminescence; oxygen vacancy; gallium vacancy;
D O I：
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中图分类号：
学科分类号：
摘要：
引用
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页码：7718 / 7727
页数：9
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