Terahertz Funneling-Induced Quantum Tunneling at Angstrom Scale

被引：0

作者：

Kim, Dai-Sik ^{[1
,2
]}

Bahk, Young-Mi ^{[1
,2
]}

Kim, Joon-Yeon ^{[1
,2
]}

Kang, Bong Joo ^{[3
,4
]}

Kim, Yong Seung ^{[5
,6
]}

Park, Joohyun ^{[7
]}

Kim, Won Tae ^{[3
,4
]}

Kim, Tae Yun ^{[8
,9
]}

Kang, Taehee ^{[1
,2
]}

Rhie, Jiyeah ^{[1
,2
]}

Han, Sanghoon ^{[1
,2
]}

Jeon, Hyeongtag ^{[7
,10
]}

Park, Cheol-Hwan ^{[8
,9
]}

Rotermund, Fabian ^{[3
,4
]}

机构：

[1] Seoul Natl Univ, Dept Phys & Astron, Seoul 08826, South Korea

[2] Seoul Natl Univ, Ctr Atom Scale Electromagnetism, Seoul 08826, South Korea

[3] Ajou Univ, Dept Phys, Suwon 16499, South Korea

[4] Ajou Univ, Dept Energy Syst Res, Suwon 16499, South Korea

[5] Sejong Univ, Graphene Res Inst, Seoul 05006, South Korea

[6] Sejong Univ, Dept Phys, Seoul 05006, South Korea

[7] Hanyang Univ, Dept Nanoscale Semicond Engn, Seoul 04763, South Korea

[8] Seoul Natl Univ, Dept Phys & Astron, Seoul 08826, South Korea

[9] Seoul Natl Univ, Ctr Theoret Phys, Seoul 08826, South Korea

[10] Hanyang Univ, Div Mat Sci & Engn, Seoul 04763, South Korea

来源：

2016 41ST INTERNATIONAL CONFERENCE ON INFRARED, MILLIMETER, AND TERAHERTZ WAVES (IRMMW-THZ) | 2016年

关键词：

FIELD ENHANCEMENT; PLASMONICS;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We demonstrate electron tunneling-induced colossal nonlinear response of vertically oriented angstrom-metallic gaps by irradiation with intense terahertz pulses. We also investigate the sub-picosecond time evolution of the induced tunneling current extracted from the transmission measurement of light passing through the metallic gap. Our technology of angstrom gap lithography enlarges the boundary of quantum plasmonics down to terahertz frequencies, enabling both linear and nonlinear angstrom optics in a broad spectrum domain. Also, our method has a huge potential of merging the knowledge of conventional dc electronic transport measurements and the study of ultrafast dynamics and nonlinear terahertz spectroscopy.

引用

页数：3

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